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科研机构
半导体研究所 [27]
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期刊论文 [25]
会议论文 [2]
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2011 [4]
2009 [2]
2008 [2]
2007 [1]
2006 [3]
2003 [1]
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半导体材料 [27]
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Spin splitting modulated by uniaxial stress in InAs nanowires
期刊论文
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua)
;
Chen YH (Chen Yonghai)
;
Jia CH (Jia Caihong)
;
Hao GD (Hao Guo-Dong)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/12/28
NARROW-GAP SEMICONDUCTOR
INVERSION-ASYMMETRY
QUANTUM DOTS
BAND
STATES
GaN grown with InGaN as a weakly bonded layer
期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:
Wei HY
;
Song HP
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  |  
浏览/下载:63/4
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
SI(001) SUBSTRATE
STRAIN
EPITAXY
Comparison of as-grown and annealed GaN/InGaN:Mg samples
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW
;
Wang XL
;
Xiao HL
;
Wang CM
;
Yin HB
;
Chen H
;
Lin DF
;
Jiang LJ
;
Feng C
;
Li JM
;
Wang ZG
;
Hou X
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  |  
浏览/下载:18/0
  |  
提交时间:2012/01/06
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
BAND-GAP
MG
PHOTOLUMINESCENCE
INGAN
DEPENDENCE
STRAIN
ENERGY
INN
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402
作者:
Hou QF
;
Yin HB
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  |  
浏览/下载:43/6
  |  
提交时间:2011/07/05
InGaN
solar cell
multiple quantum wells
IN1-XGAXN ALLOYS
BAND-GAP
INN
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:311/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者:
Song HP
;
Wei HY
;
Zhang B
收藏
  |  
浏览/下载:198/0
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
semiconductor heterojunctions
semiconductor materials
valence bands
X-ray photoelectron spectra
Influence of different interlayers on growth mode and properties of InN by MOVPE
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 238-241
Zhang, RQ
;
Liu, XL
;
Kang, TT
;
Hu, WG
;
Yang, SY
;
Jiao, CM
;
Zhu, QS
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  |  
浏览/下载:52/3
  |  
提交时间:2010/03/08
DEFECT STRUCTURE
EPITAXIAL GAN
BAND-GAP
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:233/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Simulation of In0.65Ga0.35N single-junction solar cell
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7335-7338
Zhang, X
;
Wang, X
;
Xiao, H
;
Yang, C
;
Ran, J
;
Wang, C
;
Hou, Q
;
Li, J
收藏
  |  
浏览/下载:139/1
  |  
提交时间:2010/03/08
BAND-GAP
INN
High-precision determination of lattice constants and structural characterization of InN thin films
期刊论文
journal of vacuum science & technology a, 2006, 卷号: 24, 期号: 2, 页码: 275-279
Wu MF
;
Zhou SQ
;
Vantomme A
;
Huang Y
;
Wang H
;
Yang H
收藏
  |  
浏览/下载:108/0
  |  
提交时间:2010/04/11
X-RAY-DIFFRACTION
BAND-GAP
EPITAXIAL LAYERS
INDIUM NITRIDE
HEXAGONAL INN
CUBIC INN
GROWTH
PARAMETERS
INGAN
PHASE
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