已选(0)清除
条数/页: 排序方式:
|
| Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文 journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801 Liu GH (Liu Genhua); Chen YH (Chen Yonghai); Jia CH (Jia Caihong); Hao GD (Hao Guo-Dong); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载:17/0  |  提交时间:2010/12/28
|
| Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320 作者: Yang T 收藏  |  浏览/下载:53/5  |  提交时间:2011/07/05
|
| Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region 期刊论文 ieee photonics technology letters, 2010, 卷号: 22, 期号: 24, 页码: 1799-1801 Lv XQ (Lv X. Q.); Jin P (Jin P.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载:8/0  |  提交时间:2010/12/27
|
| Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117104 Hao GD (Hao Guo-Dong); Chen YH (Chen Yong-Hai); Fan YM (Fan Ya-Ming); Huang XH (Huang Xiao-Hui); Wang HB (Wang Huai-Bing) 收藏  |  浏览/下载:12/0  |  提交时间:2010/12/28
|
| IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文 international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450 作者: Hao GD 收藏  |  浏览/下载:49/5  |  提交时间:2011/07/05
|
| Growth of Space Ordered on GaAs(100) Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD 期刊论文 半导体学报, 2005, 卷号: 26, 期号: 11, 页码: 2074-2079 作者: Wang Wei; Liang song; Pan Jiaoqing; Wang Wei 收藏  |  浏览/下载:8/0  |  提交时间:2010/11/23 |
| Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots 期刊论文 physica e-low-dimensional systems & nanostructures, 2005, 卷号: 25, 期号: 4, 页码: 592-596 作者: Jin P; Xu B 收藏  |  浏览/下载:60/0  |  提交时间:2010/03/17
|
| Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载:7/0  |  提交时间:2010/11/15
|
| Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 期刊论文 journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 429-432 Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载:31/0  |  提交时间:2010/08/12
|
| Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures 期刊论文 journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 375-381 Zhuang QD; Li JM; Zeng YP; Pan L; Li HX; Kong MY; Lin LY 收藏  |  浏览/下载:27/0  |  提交时间:2010/08/12
|