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科研机构
半导体研究所 [59]
内容类型
期刊论文 [51]
会议论文 [8]
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2011 [5]
2010 [3]
2009 [3]
2008 [8]
2007 [3]
2006 [5]
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半导体材料 [59]
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Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres
期刊论文
polymers for advanced technologies, 2011, 卷号: 22, 期号: 5, 页码: 532-537
Ni XW
;
Hu XJ
;
Zhou SY
;
Sun CH
;
Bai XX
;
Chen P
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浏览/下载:59/2
  |  
提交时间:2011/07/05
conducting polymers
hollow microspheres
microwave absorbing properties
poly(3,4-ethylenedioxythiophene) (PEDOT)
POLY 3,4-ETHYLENEDIOXYTHIOPHENE
CORE-SHELL
HOLLOW
POLYMERIZATION
POLYANILINE
SURFACE
ELECTROCHEMISTRY
POLYTHIOPHENES
NANOPARTICLES
DISPERSION
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
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  |  
浏览/下载:56/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 3, 页码: article no.32103
Li GD
;
Jiang C
;
Zhu QS
;
Sakaki H
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  |  
浏览/下载:60/9
  |  
提交时间:2011/07/05
HETEROJUNCTION
MOBILITY
SCATTERING
PHYSICS
FIELD
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
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浏览/下载:74/2
  |  
提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure
期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y
;
Wang XL
;
Xiao HL
;
Wang CM
;
Peng EC
;
Lin DF
;
Feng C
;
Jiang LJ
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  |  
浏览/下载:36/0
  |  
提交时间:2012/01/06
ALGAN/GAN/INGAN/GAN DH-HEMTS
FIELD-EFFECT TRANSISTORS
ALGAN/GAN
POLARIZATION
PASSIVATION
HFETS
GHZ
Surface roughness scattering in two dimensional electron gas channel
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B
;
Lu YW
;
Jin GR
;
Zhao Y
;
Wang XL
;
Zhu QS
;
Wang ZG
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  |  
浏览/下载:48/5
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
MOBILITY ALGAN/GAN HETEROSTRUCTURES
RAY PHOTOEMISSION SPECTROSCOPY
PERFORMANCE
ALN
MODFETS
INN
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW
;
Xu XQ
;
Wang J
;
Liu JM
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
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  |  
浏览/下载:67/8
  |  
提交时间:2011/07/05
IONIZED-IMPURITY-SCATTERING
COMPOSITIONAL INHOMOGENEITY
PHASE-SEPARATION
QUANTUM-WELLS
ALLOY
CATHODOLUMINESCENCE
HETEROSTRUCTURES
SEMICONDUCTORS
TRANSPORT
MOBILITY
In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703
Wang Y (Wang Y.)
;
Jiang Y (Jiang Y.)
;
Zhang XW (Zhang X. W.)
;
Yin ZG (Yin Z. G.)
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  |  
浏览/下载:14/0
  |  
提交时间:2010/11/14
BARRIER STRUCTURE
MAGNETIC-FIELD
POLARIZATION
CONDUCTANCE
DEVICE
Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE
期刊论文
journal of inorganic materials, 2009, 卷号: 24, 期号: 3, 页码: 559-562
Wang BZ
;
Wang XL
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  |  
浏览/下载:53/0
  |  
提交时间:2010/03/08
AlInGaN
RF-MBE
structural properties
optical properties
The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films
期刊论文
materials science and engineering b-advanced functional solid-state materials, 2009, 卷号: 162, 期号: 3, 页码: 209-212
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
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  |  
浏览/下载:91/1
  |  
提交时间:2010/03/08
Ion implantation
Metal organic chemical vapour deposition (MOCVD)
Diluted magnetic semiconductor (DMS)
Nonpolar a-plane GaN
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