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Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo); Zhang Y (Zhang Yang); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载：213/46  |  提交时间：2010/10/11
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes 会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W; Yang, JL; Sun, GS; Liu, XF; Yang, FH; Li, JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/03/09
A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1686-1691
作者:  Wu Meng
收藏  |  浏览/下载：24/0  |  提交时间：2010/11/23
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms 期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 5, 页码: 1120-1134
Yang, JL; Gaspar, J; Paul, O
收藏  |  浏览/下载：27/0  |  提交时间：2010/03/08
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG
收藏  |  浏览/下载：29/0  |  提交时间：2010/03/09
Effect of Surface Potential Barrier on the Electron Energy Distribution of NEA Photocathodes 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 8, 页码: 1479-1483
Zou Jijun; Yang Zhi; Qiao Jianliang; Chang Benkang; Zeng Yiping
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer 期刊论文
applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7423-7428
作者:  Duan RF;  Wei TB
收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29
GaN  
Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319
Zhou WM; Wang CY; Chen YH; Wang ZG
收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11
Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682
Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：66/0  |  提交时间：2010/04/11
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载：55/0  |  提交时间：2010/04/11

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