CORC

在结果中检索

CORC

浏览/检索结果: 共12条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Spin dependence of electron effective masses in InGaAs/InAlAs quantum well 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 6, 页码: 63707
Wei LM; Gao KH; Liu XZ; Zhou WZ; Cui LJ; Zeng YP; Yu G; Yang R; Lin T; Shang LY; Guo SL; Dai N; Chu JH; Austing DG
收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06
Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4955-4959
Gao, HL (Gao Hong-Ling); Li, DL (Li Dong-Lin); Zhou, WZ (Zhou Wen-Zheng); Shang, LY (Shang Li-Yan); Wang, BQ (Wang Bao-Qiang); Zhu, ZP (Zhu Zhan-Ping); Zeng, YP (Zeng Yi-Ping)
收藏  |  浏览/下载：40/0  |  提交时间：2010/03/29
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.)
收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11
Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682
Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：66/0  |  提交时间：2010/04/11
Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383
Shu Q; Shu YC; Zhang GJ; Liu RB; Yao JH; Pi B; Xing XD; Lin YW; Xu JJ; Wang ZG
收藏  |  浏览/下载：65/0  |  提交时间：2010/04/11
Theoretical investigation of intersubband transition in AlxGa1-xN/GaN/AlyGa1-yN step quantum well 期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 4, 页码: 453-461
Li, JM; Lu, YW; Han, XX; Wu, JJ; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：200/76  |  提交时间：2010/03/17
Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure 期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 3, 页码: 230-236
Han, XX; Li, JM; Wu, JJ; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：39/16  |  提交时间：2010/03/17
Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well 期刊论文
journal of vacuum science & technology b, 2004, 卷号: 22, 期号: 6, 页码: 2568-2573
Li, JM; Lu, YW; Li, DB; Han, XX; Zhu, QS; Liu, XL; Wang, ZG
收藏  |  浏览/下载：16/0  |  提交时间：2010/03/17
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma 期刊论文
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12
Hu ZH; Liao XB; Diao HW; Kong GL; Zeng XB; Xu YY
收藏  |  浏览/下载：33/3  |  提交时间：2010/03/09
Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well 期刊论文
journal of infrared and millimeter waves, 2004, 卷号: 23, 期号: 5, 页码: 329-332
Qiu ZJ; Gui YS; Cui LJ; Zeng YP; Huang ZM; Shu XZ; Dai N; Guo SL; Chu JH
收藏  |  浏览/下载：173/32  |  提交时间：2010/03/09

©版权所有 ©2017 CSpace - Powered by CSpace