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High efficiency and high power continuous-wave semiconductor terahertz lasers at similar to 3.1 THz 期刊论文
solid-state electronics, 2013, 卷号: 81, 页码: 68-71
Liu, Junqi; Chen, Jianyan; Wang, Tao; Li, Yanfang; Liu, Fengqi; Li, Lu; Wang, Lijun; Wang, Zhanguo
收藏  |  浏览/下载：23/0  |  提交时间：2013/09/17
High efficiency and high power continuous-wave semiconductor terahertz lasers at3.1 THz 期刊论文
solid-state electronics, 2013, 卷号: 81, 页码: 68–71
Junqi Liu , Jianyan Chen , Tao Wang , Yanfang Li , Fengqi Liu ,LuLi , Lijun Wang ,Zhanguo Wang
收藏  |  浏览/下载：25/0  |  提交时间：2014/02/12
High-power quantum dot superluminescent diode with integrated optical amplifier section 期刊论文
electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Wang, ZC; Jin, P; Lv, XQ; Li, XK; Wang, ZG
收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06
A high-power tapered and cascaded active multimode interferometer semiconductor laser diode 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 5, 页码: 54007
Lai, Weijiang; Cheng, Yuanbing; Yao, Chen; Zhou, Daibing; Bian, Jing; Zhao, Lingjuan; Wu, Jian
收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X
收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：196/52  |  提交时间：2010/04/28
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Liu J;  Zhu H
收藏  |  浏览/下载：73/2  |  提交时间：2010/03/08
HEMT  2DEG  
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929
Wang, XL; Chen, TS; Xiao, HL; Wang, CM; Hu, GX; Luo, WJ; Tang, J; Guo, LC; Li, JM
收藏  |  浏览/下载：77/1  |  提交时间：2010/03/08

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