CORC

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CORC

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Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文
journal of alloys and compounds, 2014, 卷号: 605, 页码: 113-117
Li, W; Wang, XL; Qu, SQ; Wang, Q; Xiao, HL; Wang, CM; Peng, EC; Hou, X; Wang, ZG
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/25
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512
Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG
收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05
Low temperature characteristics of AlGaN/GaN high electron mobility transistors 期刊论文
european physical journal-applied physics, 2011, 卷号: 56, 期号: 1, 页码: 10101
Lin DF (Lin D. F.); Wang XL (Wang X. L.); Xiao HL (Xiao H. L.); Wang CM (Wang C. M.); Qiang LJ (Qiang L. J.); Feng C (Feng C.); Chen H (Chen H.); Hou QF (Hou Q. F.); Deng QW (Deng Q. W.); Bi Y (Bi Y.); Kang H (Kang H.)
收藏  |  浏览/下载：24/0  |  提交时间：2012/02/21
Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 10, 页码: 10-12
作者:  Zhang Yu
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23
Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1258-1262
作者:  Yang Xiaoli;  Wang Yu
收藏  |  浏览/下载：17/0  |  提交时间：2010/11/23
Effect of CO on characteristics of AlGaN/GaN Schottky diode 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 3025-3027
Feng, C; Wang, XL; Yang, CB; Xiao, HL; Zhang, ML; Jiang, LJ; Tang, J; Hu, GX; Wang, JX; Wang, ZG
收藏  |  浏览/下载：76/1  |  提交时间：2010/03/08
HEMTS  
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文
microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Wang XY (Wang, Xiaoyan); Wang XL (Wang, Xiaoliang); Hu GX (Hu, Guoxin); Wang BZ (Wang, Baozhu); Ma ZY (Ma, Zhiyong); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Ran JX (Ran, Junxue); Li JP (Li, Jianping)
收藏  |  浏览/下载：32/0  |  提交时间：2010/03/29
Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 17, 页码: art.no.173507
Zhao J (Zhao, Jianzhi); Lin Z (Lin, Zhaojun); Corrigan TD (Corrigan, Timothy D.); Wang Z (Wang, Zhen); You Z (You, Zhidong); Wang Z (Wang, Zhanguo)
收藏  |  浏览/下载：60/0  |  提交时间：2010/03/29
Resonant tunnelling diodes and high electron mobility transistors integrated on GaAs substrates 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 3, 页码: 697-700
Huang YL; Ma L; Yang FH; Wang LC; Zeng YP
收藏  |  浏览/下载：68/0  |  提交时间：2010/04/11
Electrical properties and electroluminescence of 4H-SiC p-n junction diodes 期刊论文
journal of rare earths, 2004, 卷号: 22 sp.iss.si, 期号: 0, 页码: 275-278
Sun, GS; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM
收藏  |  浏览/下载：87/0  |  提交时间：2010/03/17
4H-SiC  

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