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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：103/26  |  提交时间：2010/03/29 homoepitaxy  4H-SiC  multi-epilayer  UV detection  p(+)-pi-n(-)  ULTRAVIOLET PHOTODETECTOR  EPITAXIAL-GROWTH   Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：162/28  |  提交时间：2010/03/29 micro-raman  4H-SiC  defects  3C-inclusions  triangle-shaped inclusion  EPITAXIAL LAYERS  SILICON-CARBIDE   In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 期刊论文 silicon carbide and related materials 2001 pts 1 and 2 proceedings, 2002, 卷号: 389-3, 期号: 0, 页码: 339-342 Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY 收藏  |  浏览/下载：78/0  |  提交时间：2010/08/12 3C-SiC  in-situ doping  low-pressure CVD  sapphire substrate  CHEMICAL-VAPOR-DEPOSITION  COMPETITION EPITAXY   In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文 international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001 Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 3C-SiC  in-situ doping  low-pressure CVD  sapphire substrate  CHEMICAL-VAPOR-DEPOSITION  COMPETITION EPITAXY