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半导体研究所 [20]

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期刊论文 [19]

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半导体材料 [20]

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限定条件	学科主题：半导体材料

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	Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 7, 页码: 2657-2660 Li, J; Wang, RZ; Lan, W; Zhang, XW; Duan, ZQ; Wang, B; Yan, H 收藏 \| 浏览/下载：53/2 \| 提交时间：2010/03/08 CVD DIAMOND FILMS WORK FUNCTION PHOTOCATALYTIC ACTIVITY AQUEOUS SUSPENSION THIN-FILMS DEGRADATION MICROSCOPY
	Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文 thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162 Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB 收藏 \| 浏览/下载：48/0 \| 提交时间：2010/04/11 chemical vapour deposition electrical properties and measurements scanning electron microscopy polycrystalline silicon GRAIN-BOUNDARIES STATES
	Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文 science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626 作者: Zhang SM 收藏 \| 浏览/下载：252/65 \| 提交时间：2010/08/12 gallium nitride MOCVD in situ laser reflectometry CHEMICAL-VAPOR-DEPOSITION IN-SITU SAPPHIRE SUBSTRATE NUCLEATION LAYERS FILMS
	Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文 journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352 作者: Zhang SM 收藏 \| 浏览/下载：230/30 \| 提交时间：2010/08/12 in situ laser reflectometry lateral overgrowth metalorganic chemical vapor deposition GaN CHEMICAL-VAPOR-DEPOSITION HIGH-QUALITY GAN BUFFER LAYER THREADING DISLOCATIONS TEMPERATURE EVOLUTION SURFACE MOVPE
	Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423 Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL 收藏 \| 浏览/下载：25/0 \| 提交时间：2010/08/12 amorphous layer dislocation transmission electron microscopy metalorganic chemical vapor deposition GaN MOLECULAR-BEAM EPITAXY HIGH-QUALITY GAN HETEROEPITAXIAL GROWTH ELECTRON-DIFFRACTION DEFECT STRUCTURE HETEROSTRUCTURE DISLOCATIONS MICROSCOPY (111)SI LAYER
	Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文 journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253 作者: Zhang SM 收藏 \| 浏览/下载：293/3 \| 提交时间：2010/08/12 in situ laser reflectometry lateral overgrowths surface morphology metalorganic chemical vapor deposition GaN CHEMICAL-VAPOR-DEPOSITION LIGHT-EMITTING-DIODES SAPPHIRE SUBSTRATE NUCLEATION LAYERS QUALITY TEMPERATURE
	A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文 journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29 作者: Li CM; Xu B; Jin P; Ye XL 收藏 \| 浏览/下载：30/0 \| 提交时间：2010/08/12 atomic force microscopy low dimensional structures quantum dots strain molecular beam epitaxy superluminescent diodes 1.3 MU-M HIGH-POWER INTEGRATED ABSORBER INAS ISLANDS SPECTRUM WINDOW LAYER SIZE
	Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308 作者: Xu B; Li CM; Jin P; Ye XL; Li DB 收藏 \| 浏览/下载：97/0 \| 提交时间：2010/08/12 atomic force microscopy low dimensional structures nanostructures molecular beam epitaxy semiconducting III-V materials laser diodes TEMPERATURE-DEPENDENCE THRESHOLD CURRENT MU-M LASERS
	Statistical investigation on morphology development of gallium nitride in initial growth stage 期刊论文 journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 77-84 Yuan HR; Lu DC; Liu XL; Chen Z; Han P; Wang XH; Wang D 收藏 \| 浏览/下载：76/3 \| 提交时间：2010/08/12 atomic force microscopy crystal morphology organic vapor phase epitaxy nitrides CHEMICAL-VAPOR-DEPOSITION AIN BUFFER LAYER GAN SAPPHIRE ALN EPITAXY MOVPE
	Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE 期刊论文 journal of crystal growth, 2002, 卷号: 244, 期号: 3-4, 页码: 229-235 Luo MC; Wang XL; Li JM; Liu HX; Wang L; Sun DZ; Zeng YP; Lin LY 收藏 \| 浏览/下载：36/0 \| 提交时间：2010/08/12 atomic force microscopy Raman transmission electron microscopy molecular beam epitaxy aluminium nitride ELECTRON-AFFINITY GAN SI(111)

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