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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth behavior of AlInGaN films 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 3, 页码: 474-477 Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K 收藏  |  浏览/下载：217/66  |  提交时间：2010/03/08 Scanning electron microscope  Strain  X-ray diffraction  AlInGaN   Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文 5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008 作者:  Xu B 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 MOLECULAR-BEAM EPITAXY   Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/09 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TEMPERATURE  TRANSISTORS  GROWTH  MOCVD  LAYER   Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文 physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299 Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD 收藏  |  浏览/下载：68/3  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  TEMPERATURE ALN INTERLAYERS  PHASE EPITAXY  OPTICAL-PROPERTIES  SURFACTANT  SUBSTRATE  STRESS  SI  REDUCTION  SAPPHIRE   Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy 期刊论文 microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1542-1544 Cui JP; Duan Y; Wang XF; Zeng YP 收藏  |  浏览/下载：220/122  |  提交时间：2010/03/08 ZnO film  Strain status  GaN buffer layer  Sapphire  MVPE   Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE 期刊论文 physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409 Wang XY (Wang Xiaoyan); Wang XL (Wang Xiaoliang); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li AN (Li Antnin) 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY   High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29 BUFFER LAYER  STRESS  PHOTODIODES  REDUCTION  DETECTORS  SAPPHIRE  EPITAXY  GROWTH   Recent advances in synthesis and properties of cubic boron nitride films 期刊论文 journal of inorganic materials, 2007, 卷号: 22, 期号: 3, 页码: 385-390 Zhang XW (Zhang Xing-Wang); You JB (You Jing-Bi); Chen NF (Chen Nuo-Fu) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 cubic boron nitride (c-BN) films   Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Ning, J (Ning, J.); Zhao, YM (Zhao, Y. M.); Luo, MC (Luo, M. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：89/9  |  提交时间：2010/03/29 AVALANCHE PHOTODIODES  AREA   Liquid nitrogen flowrate alarm system for MBE 会议论文 5th international conference on thin film physics and applications, shanghai, peoples r china, may 31-jun 02, 2004 Sun YW; Li SY; Ni HQ; Xu Y; Chen LH 收藏  |  浏览/下载：217/28  |  提交时间：2010/03/29 liquid nitrogen(LN2)