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科研机构
半导体研究所 [8]
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期刊论文 [8]
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半导体材料 [8]
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Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN
期刊论文
nano letters, 2013, 卷号: 13, 期号: 5, 页码: 2024–2029
Chunming Yin , Hongtao Yuan , Xinqiang Wang , Shitao Liu , Shan Zhang , Ning Tang, Fujun Xu , Zhuoyu Chen , Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge , and Bo Shen
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2014/03/18
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Growth and characterization of semi-insulating GaN films grown by MOCVD
期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB
;
Wang XL
;
Hu GX
;
Wang JX
;
Wang CM
;
Li JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
MOCVD
GaN
resistivity
TSC
N-TYPE GAN
DOPED GAN
SPECTROSCOPY
CARBON
FE
Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 3-4, 页码: 255-260
Tan LW
;
Wang QY
;
Wang J
;
Yu YH
;
Liu ZL
;
Lin LY
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  |  
浏览/下载:51/0
  |  
提交时间:2010/08/12
heteroepitaxial growth
gamma-Al2O3
silicon
silicon on insulator
FILMS
SI
DEPOSITION
AL2O3
Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands
期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD
;
Niu ZC
;
Feng SL
;
Miao ZH
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  |  
浏览/下载:93/3
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
optical microscopy
molecular beam epitaxy
nanomaterials
semiconducting III-V materials
laser diodes
TEMPERATURE-DEPENDENCE
M PHOTOLUMINESCENCE
INGAAS OVERGROWTH
GAAS
DOTS
EMISSION
ENERGY
LASER
Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells
期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 4, 页码: 355-359
Zhang MH
;
Han YJ
;
Zhang YH
;
Huang Q
;
Bao CL
;
Wang WX
;
Zhou JM
;
Lu LW
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  |  
浏览/下载:68/0
  |  
提交时间:2010/08/12
LT-GaAs
LT MQWs
defect
photoluminescence
electroabsorption
SPATIAL LIGHT MODULATORS
MOLECULAR-BEAM EPITAXY
GAAS
RECOMBINATION
DYNAMICS
Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction
期刊论文
journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630
Wang HM
;
Zeng YP
;
Zhou HW
;
Kong MY
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  |  
浏览/下载:52/0
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
HALL ELEMENTS
GAAS
MISORIENTATION
DISTORTION
LAYERS
MBE
SI
HETEROSTRUCTURES
GROWTH
Self-consistent calculation of electronic states in asymmetric double barrier structure
期刊论文
materials science and engineering b-solid state materials for advanced technology, 1995, 卷号: 35, 期号: 0, 页码: 367-371
Song AM
;
Zheng HZ
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  |  
浏览/下载:16/0
  |  
提交时间:2010/11/17
electron states
RESONANT-TUNNELING STRUCTURE
SPACE-CHARGE BUILDUP
INTRINSIC BISTABILITY
PHONON-EMISSION
DEVICES
DIODE
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