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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes 会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W; Yang, JL; Sun, GS; Liu, XF; Yang, FH; Li, JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/03/09
Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD 期刊论文
journal of crystal growth, 2008, 卷号: 311, 期号: 1, 页码: 200-204
作者:  Jia CH
收藏  |  浏览/下载：254/27  |  提交时间：2010/03/08
Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 12, 页码: 3654-3659
Gao HY (Gao Haiyong); Yan FW (Yan Fawang); Li JM (Li Jinmin); Zeng YP (Zeng Yiping); Wang JX (Wang Junxi)
收藏  |  浏览/下载：79/0  |  提交时间：2010/03/29
Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer 期刊论文
journal of physics d-applied physics, 2006, 卷号: 39, 期号: 2, 页码: 269-273
Shen WJ; Wang J; Wang QY; Duan Y; Zeng YP
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure 期刊论文
journal of crystal growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
作者:  Yin ZG
收藏  |  浏览/下载：304/5  |  提交时间：2010/04/11
One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 23, 页码: art.no.231903
Cong, GW; Wei, HY; Zhang, PF; Peng, WQ; Wu, JJ; Liu, XL; Jiao, CM; Hu, WG; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：114/24  |  提交时间：2010/03/17
Comparison of the properties of GaN grown on complex Si-based structures 期刊论文
applied physics letters, 2005, 卷号: 86, 期号: 8, 页码: art.no.081912
Zhou, SQ; Vantomme, A; Zhang, BS; Yang, H; Wu, MF
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/17
Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001) 会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Wang YL; Wu J; Chen YH; Wang ZG; Zeng YP
收藏  |  浏览/下载：124/17  |  提交时间：2010/03/29

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