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科研机构
半导体研究所 [6]
内容类型
会议论文 [6]
发表日期
2006 [2]
2004 [1]
2001 [2]
1998 [1]
学科主题
半导体材料 [6]
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学科主题:半导体材料
内容类型:会议论文
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The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:167/71
  |  
提交时间:2010/03/29
ALN
IMPURITIES
DONOR
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:100/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Sun, J
;
Hu, LZ
;
Sun, YC
;
Wang, ZY
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/03/29
GROWTH
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy
会议论文
6th international conference on solid-state and integrated-circuit technology, shanghai, peoples r china, oct 22-25, 2001
Lu LW
;
Ge WK
;
Sou IK
;
Wang J
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/10/29
ZNSTE
The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy
会议论文
2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997
Liu XL
;
Wang LS
;
Lu DC
;
Wang D
;
Wang XH
;
Lin LY
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2010/11/15
MOVPE
GaN
GaN Buffer
heavy Si-doping
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