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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 low dimensional structures  molecular beam epitaxy  nanomaterials  INAS ISLANDS  GAAS  GROWTH  GAAS(100)  THICKNESS  DENSITY   Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 THREADING DISLOCATION  SI(100)  LAYERS  FILMS   Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文 symposium on electron microscopy of semiconducting materials and ulsi devices at the spring materials-research-society meeting, san francisco, ca, apr 15-16, 1998 Wang HM; Zeng YP; Pan L; Zhou HW; Zhu ZP; Kong MY 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ; Zhang W 收藏  |  浏览/下载：25/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  COHERENT ISLANDS  GAAS  GROWTH  DOTS  DISLOCATIONS  TEMPERATURE  MECHANISMS  SI(001)  INGAAS