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Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 519-522
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生)
收藏  |  浏览/下载:1237/82  |  提交时间:2007/06/15
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生)
收藏  |  浏览/下载:1140/44  |  提交时间:2007/12/18
Control of Large-size SiC Growth Process Using Modeling tool 会议论文
14th International Conference on Crystal Growth (ICCG-14, ICVGE-12),Aug. 9-13, 2004, Grenoble, France
作者:  Chen QS(陈启生)
收藏  |  浏览/下载:883/19  |  提交时间:2007/12/18


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