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Influence of growth and annealing temperature on the strain and surface morphology of Ge995Sn0.005 epilayer 期刊论文
applied surface science, 2015, 卷号: 340, 页码: 132-137.
Su Shaojian; Zhang Dongliang; Xue Chunlai; Cheng Buwen
收藏  |  浏览/下载：9/0  |  提交时间：2016/02/16
Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth 期刊论文
journal of applied physics, 2013, 卷号: 113, 期号: 14, 页码: 143107
Wen, Juanjuan; Liu, Zhi; Li, Leliang; Li, Chong; Xue, Chunlai; Zuo, Yuhua; Li, Chuanbo; Wang, Qiming; Cheng, Buwen
收藏  |  浏览/下载：27/0  |  提交时间：2013/08/27
Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 11, 页码: 116103
Bai AQ (Bai An-Qi); Zheng J (Zheng Jun); Tao YL (Tao Ye-Liao); Zuo YH (Zuo Yu-Hua); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming)
收藏  |  浏览/下载：16/0  |  提交时间：2012/02/22
Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique 期刊论文
guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033
Zhou, Zhi-Wen; He, Jing-Kai; Li, Cheng; Yu, Jin-Zhong
收藏  |  浏览/下载：46/0  |  提交时间：2012/06/13
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013
Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM
收藏  |  浏览/下载：66/3  |  提交时间：2011/07/05
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏  |  浏览/下载：98/7  |  提交时间：2011/07/05
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载：72/4  |  提交时间：2011/07/05
Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.103507
作者:  Wei Y;  Huo YH;  Zhang YH;  Huang JL;  Ma WQ
收藏  |  浏览/下载：68/4  |  提交时间：2011/07/06
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载：125/5  |  提交时间：2010/04/22
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111) 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103
Wang H (Wang Hui); Liang H (Liang Hu); Wang Y (Wang Yong); Ng KW (Ng Kar-Wei); Deng DM (Deng Dong-Mei); Lau KM (Lau Kei-May)
收藏  |  浏览/下载：96/3  |  提交时间：2010/04/22

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