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CORC

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A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文
physical review b, 2010, 卷号: 81, 期号: 12, 页码: art. no. 125314
作者:  Wang H;  Wang H;  Yang;  Jiang DS
收藏  |  浏览/下载：122/5  |  提交时间：2010/04/28
GAN  ALLOYS  
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:  Zhang SM
收藏  |  浏览/下载：84/0  |  提交时间：2010/04/11
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 9, 页码: art.no.092114
Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.)
收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11
Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 14, 页码: art.no.143505
Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Shi SL (Shi S. L.); Beling CD (Beling C. D.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.)
收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11
Measurement of threading dislocation densities in GaN by wet chemical etching 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 9, 页码: 1229-1235
作者:  Yang H;  Zhu JJ;  Yang H;  Wang H;  Wang H
收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11
Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 7, 页码: art.no.071908
作者:  Jiang DS;  Zhang JC;  Yang H;  Zhang JC;  Zhang JC
收藏  |  浏览/下载：64/14  |  提交时间：2010/03/17
Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells 期刊论文
journal of applied crystallography, 2004, 卷号: 37, 期号: 0, 页码: 391-394
Zhang JC; Wang JF; Wang YT; Wu M; Liu JP; Zhu JJ; Yang H
收藏  |  浏览/下载：275/86  |  提交时间：2010/03/09
The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文
journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193
Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL
收藏  |  浏览/下载：83/0  |  提交时间：2010/08/12

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