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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504 Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie) 收藏  |  浏览/下载：124/5  |  提交时间：2010/04/22 MOLECULAR-BEAM EPITAXY  BUFFER LAYERS  DARK CURRENT  PHOTODIODES  LASERS   Fabry-Perot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure 期刊论文 optics express, 2009, 卷号: 17, 期号: 11, 页码: 9337-9346 作者:  Chen P;  Zhang L 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/08 BUILDING-BLOCKS  WAVE-GUIDES  GAAS  TEMPERATURE  WAVELENGTH  LASERS  INP   Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology 期刊论文 optics express, 2009, 卷号: 17, 期号: 7, 页码: 5240-5245 Li JS; Wang H; Chen XF; Yin ZW; Shi YC; Lu YQ; Dai YT; Zhu HL 收藏  |  浏览/下载：41/17  |  提交时间：2010/03/08 DFB LASERS  GRATINGS  PERFORMANCE   Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD 期刊论文 physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 1, 页码: 294-298 Jahn U (Jahn Uwe); Jiang DS (Jiang De-Sheng); Ploog KH (Ploog Klaus H.); Wang XL (Wang Xiaolan); Zhao DG (Zha0 Degang); Yang H (Yang, Hui) 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130 Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.) 收藏  |  浏览/下载：39/0  |  提交时间：2010/04/11 photoluminescence  quantum dots  indium arsenide  1.3 MU-M  CHEMICAL-VAPOR-DEPOSITION  PHASE-EPITAXY  GAAS  LUMINESCENCE  SUBSTRATE  ISLANDS  DENSITY  LASERS  LAYER   Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique 期刊论文 ieee journal of quantum electronics, 2006, 卷号: 42, 期号: 1-2, 页码: 146-151 Wang MQ; Huang YZ; Chen Q; Cai ZP 收藏  |  浏览/下载：52/0  |  提交时间：2010/04/11 cavity resonators  FDTD methods  laser modes  nanowire cavity  quality factor  reflection coefficient  INDIUM-PHOSPHIDE NANOWIRES  PADE-APPROXIMATION  LASER  GAIN   Improved surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot active regions by introducing annealing processes 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 8, 页码: art.no.081902 Yang T (Yang Tao); Tatebayashi J (Tatebayashi Jun); Nishioka M (Nishioka Masao); Arakawa Y (Arakawa Yasuhiko) 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  THRESHOLD CURRENT  ROOM-TEMPERATURE  LASERS  MODULATION  LAYER   Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties 期刊论文 journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 477-484 作者:  Ye XL;  Liang S;  Pan JQ 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 bimodal size distribution  metalorganic vapor phase epitaxy  self-assembled quantum dots  indium arsenide  PHASE-EPITAXY  ISLANDS  INGAAS  SIZE  LASER   Fabrication of semiconductor optical amplifiers and a novel gain measuring technique 会议论文 6th chinese optoelectronics symposium, kowloon, peoples r china, sep 12-14, 2003 作者:  Yu LJ 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 SPECTRA  LASERS