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科研机构
半导体研究所 [11]
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期刊论文 [7]
会议论文 [4]
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2013 [1]
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光电子学 [11]
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Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature
期刊论文
materials science in semiconductor processing, 2013, 卷号: 16, 期号: 3, 页码: 987–991
Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan
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浏览/下载:16/0
  |  
提交时间:2014/04/08
Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing
期刊论文
physica status solidi (a) applications and materials science, 2012, 卷号: 209, 期号: 12, 页码: 2521-2526
Hu, Shaoxu
;
Han, Peide
;
Wang, Shuai
;
Mao, Xue
;
Li, Xinyi
;
Gao, Lipeng
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/05/07
Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing
期刊论文
hu, shaoxu ; han, peide ; wang, shuai ; mao, xue ; li, xinyi ; gao, lipeng, 2012, 卷号: 209, 期号: 12, 页码: 2521-2526
Hu, Shaoxu
;
Han, Peide
;
Wang, Shuai
;
Mao, Xue
;
Li, Xinyi
;
Gao, Lipeng
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2013/05/13
The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur
期刊论文
chinese physics letters, 2012, 卷号: 29, 期号: 4, 页码: 46101
Hu, SX
;
Han, PD
;
Gao, LP
;
Mao, X
;
Li, XY
;
Fan, YJ
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  |  
浏览/下载:14/0
  |  
提交时间:2013/03/17
Optically controlled quantum dot gated transistors with high on/off ratio
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 8, 页码: art. no. 083503
Yang XH (Yang Xiaohong)
;
Xu XL (Xu Xiulai)
;
Wang XP (Wang Xiuping)
;
Ni HQ (Ni Haiqiao)
;
Han Q (Han Qin)
;
Niu ZC (Niu Zhichuan)
;
Williams DA (Williams David A.)
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  |  
浏览/下载:68/2
  |  
提交时间:2010/04/22
III-V semiconductors
indium compounds
laser beam applications
nanoelectronics
photoelectric devices
photoelectricity
phototransistors
semiconductor quantum dots
I-N JUNCTIONS
A new phototransistor with uni-travelling-carrier and optically gradual coupling properties
期刊论文
opto-electronics review, 2009, 卷号: 17, 期号: 3, 页码: 242-246
Wang L
;
Zhao L
;
Pan J
;
Zhang W
;
Wang H
;
Zhu H
;
Wang W
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浏览/下载:41/0
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提交时间:2010/03/08
phototransistor
double heterojunction
uni-travelling-carrier
gradual coupling
Advances in high power semiconductor diode lasers - art. no. 682402
会议论文
conference on semiconductor lasers and applications iii, beijing, peoples r china, nov 12-13, 2007
Ma, XY
;
Zhong, L
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浏览/下载:35/0
  |  
提交时间:2010/03/09
laser diodes
laser bar
stacks
high power
power conversion efficiency
reliability
packaging
The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers
期刊论文
materials letters, 2006, 卷号: 60, 期号: 29-30, 页码: 3693-3696
Wang XL (Wang X. L.)
;
Zhao DG (Zhao D. G.)
;
Li XY (Li X. Y.)
;
Gong HM (Gong H. M.)
;
Yang H (Yang H.)
;
Liang JW (Liang J. W.)
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浏览/下载:106/0
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提交时间:2010/04/11
AlGaN
LT AlN
TAXRD
dislocation
Influence of mode symmetry on quality factors of degenerate states in microlasers with an equilateral triangle resonator
会议论文
conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004
Chen Q
;
Huang YZ
;
Guo WH
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浏览/下载:141/34
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提交时间:2010/03/29
microcavity
High-output very small aperture laser and its near-field distribution properties - art. no. 60200L
会议论文
conference on optoelectronic materials and devices for optical communications, shanghai, peoples r china, nov 07-10, 2005
Gan QQ
;
Song SF
;
Chen LH
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浏览/下载:208/49
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提交时间:2010/03/29
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