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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Optically controlled quantum dot gated transistors with high on/off ratio 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 8, 页码: art. no. 083503 Yang XH (Yang Xiaohong); Xu XL (Xu Xiulai); Wang XP (Wang Xiuping); Ni HQ (Ni Haiqiao); Han Q (Han Qin); Niu ZC (Niu Zhichuan); Williams DA (Williams David A.) 收藏  |  浏览/下载：69/2  |  提交时间：2010/04/22 III-V semiconductors  indium compounds  laser beam applications  nanoelectronics  photoelectric devices  photoelectricity  phototransistors  semiconductor quantum dots  I-N JUNCTIONS   Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410 作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  QUANTUM DOTS  BAND-GAP  GROWTH  SURFACES   Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 21, 页码: art. no. 212109 作者:  Li JB 收藏  |  浏览/下载：114/0  |  提交时间：2010/03/08 ab initio calculations  band structure  cadmium compounds  III-V semiconductors  II-VI semiconductors  IV-VI semiconductors  zinc compounds   The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001 作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：91/41  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  ELECTRON-TRANSPORT  BAND-GAP  FILMS  SAPPHIRE   Investigation on the structural origin of n-type conductivity in InN films 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403 Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H 收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  GAN FILMS  DISLOCATION SCATTERING  LAYER THICKNESS  INDIUM NITRIDE  BAND-GAP  VACANCIES   Temperature dependence of absorption edge in MOCVD grown GaN 期刊论文 journal of materials science-materials in electronics, 2007, 卷号: 18, 期号: 12, 页码: 1229-1233 Majid A (Majid Abdul); Ali A (Ali Akbar); Zhu JJ (Zhu Jianjun) 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Coupling coefficients of gratings with graded refractive index waveguides 期刊论文 optical and quantum electronics, 1997, 卷号: 29, 期号: 5, 页码: 539-553 Chen C; Chen L; Wang Q 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/17 DISTRIBUTED FEEDBACK LASERS  MOLECULAR-BEAM EPITAXY  HETEROSTRUCTURE  DFB  DESIGN   Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100)GaAs substrates 期刊论文 ieee journal of selected topics in quantum electronics, 1997, 卷号: 3, 期号: 2, 页码: 471-474 Xu SJ; Chua SJ; Zhang X; Zhang ZH; Luo CP; Yuan ZL; Xu ZY; Zhou JM 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/17 photoluminescent materials/devices  quantum wells  semiconductor heterojunctions  semiconductor lasers  semiconductor measurements  MOLECULAR-BEAM EPITAXY  GAAS  WELLS