QQ客服 官方微博 反馈留言

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Internal quantum efficiency analysis of solar cell by genetic algorithm 期刊论文 solar energy, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891 Xiong KL (Xiong Kanglin); Lu SL (Lu Shulong); Zhou TF (Zhou Taofei); Jiang DS (Jiang Desheng); Wang RX (Wang Rongxin); Qiu K (Qiu Kai); Dong JR (Dong Jianrong); Yang H (Yang Hui) 收藏  |  浏览/下载：24/0  |  提交时间：2010/11/27 Internal quantum efficiency  Surface recombination  Genetic algorithm  Full spectra   Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes 期刊论文 journal of semiconductors, 2010, 卷号: 31, 期号: 9, 页码: 94009-1-94009-4 作者:  Duan Ruifei;  Duan Ruifei;  Ji Xiaoli;  Ding Kai 收藏  |  浏览/下载：12/0  |  提交时间：2011/08/16 Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity 期刊论文 applied physics express, 2010, 卷号: 3, 期号: 7, 页码: art. no. 072001 Huang ZL (Huang Zengli); Wang JF (Wang Jianfeng); Liu ZH (Liu Zhenghui); Xu K (Xu Ke); Yang H (Yang Hui); Cao B (Cao Bing); Han Q (Han Qin); Zhang GJ (Zhang Guiju); Wang CH (Wang Chinhua) 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/17 LIGHT-EMITTING-DIODES   Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 11, 页码: art. no. 114215 Zeng C (Zeng Chang); Zhang SM (Zhang Shu-Ming); Ji L (Ji Lian); Wang HB (Wang Huai-Bing); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Cao Q (Cao Qing); Chong M (Chong Ming); Duan LH (Duan Li-Hong); Wang H (Wang Hai); Shi YS (Shi Yong-Sheng); Liu SY (Liu Su-Ying); Yang H (Yang Hui); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：43/0  |  提交时间：2010/12/05 Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 2, 页码: 361-365 作者:  Pan JQ 收藏  |  浏览/下载：25/0  |  提交时间：2010/03/29 BANDGAP ENERGY CONTROL   Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I 会议论文 conference on nanophotonic materials iii, san diego, ca, aug 13-14, 2006 作者:  Pan JQ 收藏  |  浏览/下载：154/17  |  提交时间：2010/03/29 InP   Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m) 期刊论文 ieee journal of selected topics in quantum electronics, 2000, 卷号: 6, 期号: 4, 页码: 577-584 Yang GW; Hwu RJ; Xu ZT; Ma XY 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 quantum-well lasers  semiconductor diodes  semiconductor epitaxial layers  semiconductor lasers  semiconductor materials  OPERATION  SINGLE