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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yang, H; Chen, Y; Wang, LB; Yi, XY; Fan, JM; Liu, ZQ; Yang, FH; Wang, LC; Wang, GH; Zeng, YP; Li, JM 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/09 GaN-based LED  grinding  ray tracing   High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文 journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516 Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 STRESS  SI(111)  REDUCTION  THICKNESS   Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well 期刊论文 nanotechnology, 2008, 卷号: 19, 期号: 27, 页码: art. no. 275304 Yang, L; Motohisa, J; Tomioka, K; Takeda, J; Fukui, T; Geng, MM; Jia, LX; Zhang, L; Liu, YL 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08 INTERNAL ELECTRIC-FIELDS  OPTICAL-PROPERTIES  EPITAXIAL-GROWTH  BUILDING-BLOCKS  (111)B SURFACES  NANOWIRES  INTENSITY  DEVICES  GAAS   Simulation research of nonlinear behavior induced by the charge-carrier effect in resonant-cavity-enhanced photodetectors 期刊论文 journal of lightwave technology, 2007, 卷号: 25, 期号: 9, 页码: 2783-2790 Guo JC (Guo Jianchuan); Zuo YH (Zuo Yuhua); Zhang Y (Zhang Yun); Ding WC (Ding Wuchang); Cheng BW (Cheng Buwen); Yu JZ (Yu, Jinzhong); Wang QM (Wang, Qiming) 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/29 bistable state   Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 4, 页码: art.no.041903 作者:  Zhao DG 收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11 PHOTOLUMINESCENCE  LUMINESCENCE