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CORC

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Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文
superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du
收藏  |  浏览/下载：30/0  |  提交时间：2017/03/10
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 9, 页码: 3963-3966
Song C; Rui YJ; Wang QB; Xu J; Li W; Chen KJ; Zuo YH; Wang QM
收藏  |  浏览/下载：54/6  |  提交时间：2011/07/05
InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18504
Zuo YH; Cao QA; Zhang Y; Zhang LZ; Guo JC; Xue CL; Cheng BW; Wang QM
收藏  |  浏览/下载：56/4  |  提交时间：2011/07/05
Effective recombination velocity of textured surfaces 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 19, 页码: art. no. 193107
Xiong KL (Xiong Kanglin); Lu SL (Lu Shulong); Jiang DS (Jiang Desheng); Dong JR (Dong Jianrong); Yang H (Yang Hui)
收藏  |  浏览/下载：119/3  |  提交时间：2010/06/04
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG
收藏  |  浏览/下载：49/4  |  提交时间：2010/03/08
The junction temperature and forward voltage relationship of GaN-based laser diode 期刊论文
laser physics, 2009, 卷号: 19, 期号: 3, 页码: 400-402
Liu YT; Cao Q; Song GF; Chen LH
收藏  |  浏览/下载：310/64  |  提交时间：2010/03/08
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08
Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements 期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 8, 页码: art. no. 083121
Liu, HY; Meng, ZM; Dai, QF; Wu, LJ; Guo, Q; Hu, W; Liu, SH; Lan, S; Yang, T
收藏  |  浏览/下载：54/3  |  提交时间：2010/03/08
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载：51/5  |  提交时间：2010/03/08
Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui)
收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29

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