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科研机构
半导体研究所 [23]
内容类型
会议论文 [23]
发表日期
2009 [1]
2008 [3]
2006 [3]
2003 [1]
2002 [1]
2001 [4]
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光电子学 [23]
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内容类型:会议论文
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Growth behavior of AlInGaN films
会议论文
4th asian conference on crystal growth and crystal technology, sendai, japan, may 21-24, 2008
Shang JZ
;
Zhang BP
;
Mao MH
;
Cai LE
;
Zhang JY
;
Fang ZL
;
Liu BL
;
Yu JZ
;
Wang QM
;
Kusakabe K
;
Ohkawa K
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/03/09
Scanning electron microscope
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:134/0
  |  
提交时间:2010/03/09
GaN
MOCVD
LED
nano-pattern
SEM
HRXRD
PL
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
GaN
nitrides
LED
MOCVD
patterned sapphire substrate
wet etching
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC
;
Wang, JX
;
Liu, NX
;
Liu, Z
;
Li, JM
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
AlGaN
GaN template
A1N interlayer
MOCVD
crack
interference fringes
Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters
会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Hou LP
;
Zhu HL
;
Zhou F
;
Wang BJ
;
Bian J
;
Wang W
收藏
  |  
浏览/下载:513/62
  |  
提交时间:2010/03/29
asymmetric twin waveguide
Dipole mode photonic crystal point defect laser on InGaAsP/InP
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Zheng WH
;
Ren G
;
Ma XT
;
Cai XH
;
Chen LH
;
Nozaki K
;
Baba T
收藏
  |  
浏览/下载:170/19
  |  
提交时间:2010/03/29
dipole mode
High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD
会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Zhu, HL
;
Wang, W
收藏
  |  
浏览/下载:156/44
  |  
提交时间:2010/03/29
selective area growth
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask
会议论文
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
Feng G
;
Shen XM
;
Zhu JJ
;
Zhang BS
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:15/2
  |  
提交时间:2010/10/29
BUFFER LAYER
SUBSTRATE
DIODES
GROWTH
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
会议论文
10th international meeting on ferroelectricity (imf-10), madrid, spain, sep 03-07, 2001
Wang H
;
Shang SX
;
Yao WF
;
Hou Y
;
Xu XH
;
Wang D
;
Wang M
;
Yu JZ
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/15
Bi2Ti2O7
thin film
MOCVD
(111) orientation
CHEMICAL-VAPOR-DEPOSITION
CRYSTAL THIN-FILMS
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li LH
;
Pan Z
;
Zhang W
;
Lin YW
;
Wang XY
;
Wu RH
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
characterization
defects
X-ray diffraction
molecular beam epitaxy
nitrides
GAAS
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