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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：光电子学    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 AlGaN  GaN template  A1N interlayer  MOCVD  crack  interference fringes   Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 会议论文 10th international meeting on ferroelectricity (imf-10), madrid, spain, sep 03-07, 2001 Wang H; Shang SX; Yao WF; Hou Y; Xu XH; Wang D; Wang M; Yu JZ 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 Bi2Ti2O7  thin film  MOCVD  (111) orientation  CHEMICAL-VAPOR-DEPOSITION  CRYSTAL THIN-FILMS   Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 characterization  defects  X-ray diffraction  molecular beam epitaxy  nitrides  GAAS   Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Pan Z; Li LH; Zhang W; Wang XU; Lin YW; Wu RH 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 adsorption  characterization  radiation  molecular beam epitaxy  nitrides  SURFACE-EMITTING LASER  QUANTUM-WELLS  OPERATION  RANGE