QQ客服 官方微博 反馈留言

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 发表日期：2020     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Long Live TIME: Improving Lifetime and Security for NVM-Based Training-in-Memory Systems 期刊论文 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2020, 卷号: 39, 期号: 12, 页码: 4707-4720 作者:  Cai, Yi;  Lin, Yujun;  Xia, Lixue;  Chen, Xiaoming;  Han, Song 收藏  |  浏览/下载：18/0  |  提交时间：2021/12/01 Gradient sparsification  lifetime  neural networks  training-in-memory  wear-leveling   Enabling Secure NVM-Based in-Memory Neural Network Computing by Sparse Fast Gradient Encryption 期刊论文 IEEE TRANSACTIONS ON COMPUTERS, 2020, 卷号: 69, 期号: 11, 页码: 1596-1610 作者:  Cai, Yi;  Chen, Xiaoming;  Tian, Lu;  Wang, Yu;  Yang, Huazhong 收藏  |  浏览/下载：32/0  |  提交时间：2020/12/10 Artificial neural networks  Nonvolatile memory  Encryption  Computational modeling  Hardware  Non-volatile memory (NVM)  compute-in-memory (CIM)  neural network  security  encryption   Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory 期刊论文 JOURNAL OF MATERIOMICS, 2020, 卷号: 6 作者:  Yang, Bingbing;  Li, Chenhui;  Liu, Miao;  Wei, Renhuai;  Tang, Xianwu 收藏  |  浏览/下载：23/0  |  提交时间：2020/10/26 Inorganic ferroelectric  Flexible electronics  Lead-free BiFe0.93Mn0.07O3   Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands 期刊论文 Acta Materialia, 2020, 卷号: 187, 页码: 12-18 作者:  Han, M.J.;  Tang, Y.L.;  Wang, Y.J.;  Zhu, Y.L.;  Ma, J.Y. 收藏  |  浏览/下载：5/0  |  提交时间：2020/11/14 Bismuth compounds  Digital storage  Heterojunctions  High resolution transmission electron microscopy  Iron compounds  Scanning probe microscopy  Switching  Transmission electron microscopy  Tunnel junctions  Charged domain wall  Conductive filaments  Macroscopic and microscopic  Nonvolatile memory devices  Piezoresponse force microscopy  Resistance switching behaviors  Resistive switching behaviors  Technological applications   Anti-oxidative passivation and electrochemical activation of black phosphorusviacovalent functionalization and its nonvolatile memory application 期刊论文 JOURNAL OF MATERIALS CHEMISTRY C, 2020, 卷号: 8, 期号: 22, 页码: 7309-7313 作者:  Chen, Weilin;  Gao, Shuang;  Xie, Zhuolin;  Lu, Ying;  Gong, Guodong 收藏  |  浏览/下载：39/0  |  提交时间：2020/12/16 PHOSPHORUS   A comprehensive investigation of MoO3 based resistive random access memory 期刊论文 RSC ADVANCES, 2020, 卷号: 10, 期号: 33, 页码: 19337-19345 作者:  Fatheema, Jameela;  Shahid, Tauseef;  Mohammad, Mohammad Ali;  Islam, Amjad;  Malik, Fouzia 收藏  |  浏览/下载：20/0  |  提交时间：2020/12/16 SWITCHING CHARACTERISTICS  NONVOLATILE MEMORY  LOW-POWER  PERFORMANCE  MECHANISMS  SUBSTRATE  DEVICES  RRAM   Stretchable and Twistable Resistive Switching Memory with Information Storage and Computing Functionalities 期刊论文 ADVANCED MATERIALS TECHNOLOGIES, 2020 作者:  Lu, Ying;  Gao, Shuang;  Li, Fali;  Zhou, Youlin;  Xie, Zhuolin 收藏  |  浏览/下载：11/0  |  提交时间：2020/12/16 ELECTRONICS  SKIN   All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2020 作者:  Hu, Lingxiang;  Yang, Jing;  Wang, Jingrui;  Cheng, Peihong;  Chua, Leon O. 收藏  |  浏览/下载：118/0  |  提交时间：2020/12/16 AMORPHOUS OXIDE SEMICONDUCTOR  RESISTIVE SWITCHING MEMORY  ELECTRONIC-STRUCTURE  SYNAPSES  DEVICE  A-INGAZNO4-X  NETWORKS   Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure 期刊论文 ADVANCED ELECTRONIC MATERIALS, 2020, 卷号: 6, 期号: 6, 页码: 2000102 作者:  Zengyao Ren;   Mengxi Wang;   Pengfei Liu;   Qi Liu;   Kaiyou Wang;   Gehard Jakob;   Jikun Chen;   Kangkang Meng;   Xiaoguang Xu;   Jun Miao;   Yong Jiang 收藏  |  浏览/下载：5/0  |  提交时间：2021/06/28