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Resistive Switching Behavior in Ferroelectric Heterostructures 期刊论文
SMALL, 2019, 卷号: 15, 期号: 32, 页码: 13
作者:  Wang, Zhan Jie;  Bai, Yu
收藏  |  浏览/下载:24/0  |  提交时间:2021/02/02
Resistive Switching Behavior in Ferroelectric Heterostructures 期刊论文
SMALL, 2019, 卷号: 15, 期号: 32, 页码: 13
作者:  Wang, Zhan Jie;  Bai, Yu
收藏  |  浏览/下载:21/0  |  提交时间:2021/02/02
Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114, 期号: 16, 页码: 5
作者:  
收藏  |  浏览/下载:45/0  |  提交时间:2019/06/24
Anisotropic resistance switching in hexagonal manganites 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 99, 期号: 5
作者:  
收藏  |  浏览/下载:47/0  |  提交时间:2019/12/26
Resistive switching device based on high-mobility graphene and its switching mechanism 期刊论文
Journal of Physics: Conference Series, 2019, 卷号: 1168, 期号: 2
作者:  
收藏  |  浏览/下载:38/0  |  提交时间:2019/04/18
Electroresistance of Pt/BaTiO3/LaNiO3 ferroelectric tunnel junctions and its dependence on BaTiO3 thickness 期刊论文
MATERIALS RESEARCH EXPRESS, 2019, 卷号: 6
作者:  
收藏  |  浏览/下载:12/0  |  提交时间:2019/11/19
Operando diagnostic detection of interfacial oxygen "breathing' of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy 期刊论文
MATERIALS RESEARCH LETTERS, 2019, 卷号: 7, 页码: 117-123
作者:  Niu, Gang;  Calka, Pauline;  Huang, Peng;  Sharath, Sankaramangalam Ulhas;  Petzold, Stefan
收藏  |  浏览/下载:24/0  |  提交时间:2019/11/19
Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114
作者:  Hang, Cheng-Zhou;  Wang, Chen;  Gao, Bin;  Chen, Huan;  Xu, Ming-Hong
收藏  |  浏览/下载:16/0  |  提交时间:2019/12/02
Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: Vol.114 No.18
作者:  Chen, Z.a;  Zhang, Y.a;  Yu, Y.a;  Cao, M.a;  Che, Y.a
收藏  |  浏览/下载:10/0  |  提交时间:2019/11/21
Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by TaO/TaO Bi-Layer Structure. 期刊论文
Nanoscale research letters, 2019, 卷号: Vol.14 No.1, 页码: 111
作者:  Danian Dong;  Xiulong Wu;  Tiancheng Gong;  Ming Liu;  Hangbing Lv
收藏  |  浏览/下载:36/0  |  提交时间:2019/04/24


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