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Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 41, 页码: 38031-38038
作者:  Zhao, Hongquan;  Yang, Yuhui;  Wang, Chunxiang;  Zhou, Dahua;  Shi, Xuan
收藏  |  浏览/下载：50/0  |  提交时间：2020/08/24
Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate 期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2019, 卷号: 141, 期号: 28, 页码: 11004-11008
作者:  Wang, Huaping;  Xue, Xudong;  Jiang, Qianqing;  Wang, Yanlei;  Geng, Dechao
收藏  |  浏览/下载：54/0  |  提交时间：2019/10/18
A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices 期刊论文
ACS NANO, 2019, 卷号: 13, 期号: 5, 页码: 5513-5522
作者:  Zhang, Dingdong;  Du, Jinhong;  Hong, Yi-Lun;  Zhang, Weimin;  Wang, Xiao
收藏  |  浏览/下载：28/0  |  提交时间：2021/02/02
Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 14, 页码: 9
作者:  Khan, Usman;  Luo, Yuting;  Tang, Lei;  Teng, Changjiu;  Liu, Jiaman
收藏  |  浏览/下载：34/0  |  提交时间：2021/02/02
Pressure effect on the electronic, structural, and vibrational properties of layered 2H-MoTe2 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 99, 期号: 2, 页码: 6
作者:  Zhao, Xiao-Miao;  Liu, Han-yu;  Goncharov, Alexander F.;  Zhao, Zhi-Wei;  Struzhkin, Viktor V.
收藏  |  浏览/下载：2/0  |  提交时间：2020/03/31
A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices 期刊论文
ACS Nano, 2019, 卷号: 13, 期号: 5, 页码: 5513-5522
作者:  Liu LQ(刘连庆);  Zhang, Dingdong;  Du, Jinhong;  Hong, Yi-Lun;  Zhang, Weimin
收藏  |  浏览/下载：91/0  |  提交时间：2019/06/18
Short channel monolayer MoS2 field-effect transistors defined by SiO x nanofins down to 20 nm 期刊论文
Nanotechnology, 2019, 卷号: Vol.30 No.29
作者:  Bi, Kaixi;  Liu, Huaizhi;  Chen, Yiqin;  Luo, Fang;  Shu, Zhiwen
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/13
Short channel monolayer MoS field-effect transistors defined by SiO nanofins down to 20 nm 期刊论文
Nanotechnology, 2019, 卷号: Vol.30 No.29, 页码: 295301
作者:  Kaixi Bi;  Huaizhi Liu;  Yiqin Chen;  Fang Luo;  Zhiwen Shu
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/13
Chemical modification, field effect transistors and voltage-driven spin logic gates of tailored monolayer MoS2 nanoflakes 期刊论文
Applied Surface Science, 2019, 卷号: 481, 页码: 910-918
作者:  Zhang, Lishu;  Dai, Xinyue;  Li, Tao;  Li, Hui
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Short channel monolayer MoS2 field-effect transistors defined by SiO x nanofins down to 20 nm. 期刊论文
Nanotechnology, 2019, 卷号: Vol.30 No.29, 页码: 295301
作者:  Kaixi Bi;  Huaizhi Liu;  Yiqin Chen;  Fang Luo;  Zhiwen Shu
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17

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