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金属研究所 [5]
长春光学精密机械与物... [2]
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期刊论文 [10]
发表日期
2019 [10]
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Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate
期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2019, 卷号: 141, 期号: 28, 页码: 11004-11008
作者:
Wang, Huaping
;
Xue, Xudong
;
Jiang, Qianqing
;
Wang, Yanlei
;
Geng, Dechao
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2019/10/18
Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates
期刊论文
CARBON, 2019, 卷号: 148, 页码: 241-248
作者:
Wei, Shijing
;
Ma, Lai-Peng
;
Chen, Mao-Lin
;
Liu, Zhibo
;
Ma, Wei
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2021/02/02
Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 19, 页码: 17629-17636
作者:
Xin, Xing
;
Xu, Chuan
;
Zhang, Dingdong
;
Liu, Zhibo
;
Ma, Wei
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/02/02
graphene
2D material
film
chemical vapor deposition
number of layers
Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 19, 页码: 17629-17636
作者:
Xin, Xing
;
Xu, Chuan
;
Zhang, Dingdong
;
Liu, Zhibo
;
Ma, Wei
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2021/02/02
graphene
2D material
film
chemical vapor deposition
number of layers
Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 19, 页码: 17629-17636
作者:
Xin, Xing
;
Xu, Chuan
;
Zhang, Dingdong
;
Liu, Zhibo
;
Ma, Wei
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2021/02/02
graphene
2D material
film
chemical vapor deposition
number of layers
Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors
期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 14, 页码: 9
作者:
Khan, Usman
;
Luo, Yuting
;
Tang, Lei
;
Teng, Changjiu
;
Liu, Jiaman
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2021/02/02
Bi2O2Se
contact resistance
detectivity
millimeter-size single crystal
phototransistor
responsivity
vapor-solid deposition
PbI2-MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment
期刊论文
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2019, 卷号: 10, 期号: 15, 页码: 4203-4208
作者:
Xiao, JT
;
Liu, JX
;
Sun, K
;
Zhao, Y
;
Shao, ZY
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2020/10/16
PEROVSKITE SOLAR-CELLS
TEMPERATURE-DEPENDENCE
PBI2 FLAKES
GRAPHENE
HETEROSTRUCTURE
PHOTODETECTORS
MONOLAYER
GAP
Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
作者:
L.Wang
;
L.Chen
;
S.L.Wong
;
X.Huang
;
W.G.Liao
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2020/08/24
chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics
Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors
期刊论文
Photonics Research, 2019, 卷号: 7, 期号: 10, 页码: 1127-1133
作者:
Y.Wu
;
Z.Li
;
K.-W.Ang
;
Y.Jia
;
Z.Shi
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2020/08/24
Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors
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