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近代物理研究所 [9]
北京航空航天大学 [1]
国家空间科学中心 [1]
寒区旱区环境与工程研... [1]
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期刊论文 [12]
发表日期
2019 [12]
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发表日期:2019
内容类型:期刊论文
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Beam optics of upgraded high energy heavy ion microbeam in Lanzhou
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 461, 页码: 10-15
作者:
Ponomarov, Artem
;
Du, Guanghua
;
Guo, Jinlong
;
Liu, Wenjing
;
Wu, Ruqun
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2022/01/19
High energy heavy ion microbeam
Spatial resolution
Beam optics simulation
Cyclotron
Carbon therapy
Single event upset
SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA
期刊论文
ELECTRONICS, 2019, 卷号: 8, 期号: 12, 页码: 12
作者:
Cai, Chang
;
Gao, Shuai
;
Zhao, Peixiong
;
Yu, Jian
;
Zhao, Kai
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2022/01/19
field-programmable gate arrays
embedded block memory
single event
fault tolerance
radiation effect
Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories
期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 102, 页码: 6
作者:
Yin, Ya-nan
;
Liu, Jie
;
Liu, Tian-qi
;
Ye, Bing
;
Ji, Qing-gang
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2022/01/19
Annealing
Flash memories
Heavy ions
Retention errors
Single event upset
Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid
期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 5
作者:
Gao, J.
;
Zhang, Q.
;
Li, B.
;
Xi, K.
;
Li, B.
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/01/19
SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell
期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 6
作者:
Cai, C.
;
Zhao, P. X.
;
Xu, L. W.
;
Liu, T. Q.
;
Li, D. Q.
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2022/01/19
UTBB FDSOI
Radiation hardened
8T
SRAM
Single event upset
Preliminary single event effect distribution investigation on 28 nm soc using heavy ion microbeam
期刊论文
Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2019, 卷号: 450, 页码: 323-326
作者:
Yang, Weitao
;
Du, Xuecheng
;
Guo, Jinlong
;
Wei, Junze
;
Du, Guanghua
收藏
  |  
浏览/下载:113/0
  |  
提交时间:2019/10/08
Single event effect (see)
System on chip (soc)
Heavy ion microbeam
On-chip-memory (ocm)
Preliminary single event effect distribution investigation on 28 nm SoC using heavy ion microbeam
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 450, 页码: 323-326
作者:
Yang, Weitao
;
Du, Xuecheng
;
Guo, Jinlong
;
Wei, Junze
;
Du, Guanghua
收藏
  |  
浏览/下载:72/0
  |  
提交时间:2019/11/10
Single event effect (SEE)
System on Chip (SoC)
Heavy ion microbeam
On-chip-memory (OCM)
Design and verification of universal evaluation system for single event effect sensitivity measurement in very-large-scale integrated circuits
期刊论文
IEICE ELECTRONICS EXPRESS, 2019, 卷号: 16, 期号: 10, 页码: 6
作者:
Xu, Liewei
;
Cai, Chang
;
Liu, Tianqi
;
Ke, Lingyun
;
Yu, Jun
收藏
  |  
浏览/下载:67/0
  |  
提交时间:2019/11/10
FPGA
single event effects
heavy ions
irradiation
Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs
期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2019, 卷号: 30, 期号: 5, 页码: 11
作者:
Zhao, Pei-Xiong
;
Geng, Chao
;
Zhang, Zhan-Gang
;
Liu, Jie
;
Li, Xiao-Yuan
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2019/11/10
Anti-fuse PROM
Single event effects
Heavy ions
Pulsed laser
Space error rate
Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs
期刊论文
ELECTRONICS, 2019, 卷号: 8, 期号: 3, 页码: 13
作者:
Ke, Lingyun
;
Zhao, Peixiong
;
Liu, Jie
;
Fan, Xue
;
Cai, Chang
收藏
  |  
浏览/下载:108/0
  |  
提交时间:2019/11/10
FPGA
radiation hardening
single event upsets
heavy ions
error rates
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