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CORC

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Organo-Solubility Carbazole-Containing Polyimides with Tunable Memory Characteristics Based on Different Dianhydride Moieties 期刊论文
MACROMOLECULAR CHEMISTRY AND PHYSICS, 2018, 卷号: 219, 期号: 17, 页码: 13
作者:  Yang, Yanhua;  Jin, Pan;  Ding, Shijin;  Chu, Yueying;  Shen, Yingzhong
收藏  |  浏览/下载：27/0  |  提交时间：2018/11/05
Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices 期刊论文
Applied Physics Letters, 2018
作者:  Wu QT(吴全潭);  Writam Banerjee;  Cao JC(曹劲琛);  Ji ZY(姬濯宇);  Li L(李泠)
收藏  |  浏览/下载：21/0  |  提交时间：2019/04/12
Total ionizing dose and single event effects of 1 Mb HfO2-based resistive random access memory 期刊论文
MICROELECTRONICS RELIABILITY, 2018
作者:  Bi JS(毕津顺);  Yuan Duan;  Xi K(习凯);  Li B(李博)
收藏  |  浏览/下载：12/0  |  提交时间：2019/04/12
The impact of RTN signal on array level resistance fluctuation of resistive random access memory 期刊论文
Electron Device Letters, 2018
作者:  Xu XX(许晓欣);  Chen CB(陈传兵);  Liu J(刘璟);  Dong DN(董大年);  Yuan P(袁鹏)
收藏  |  浏览/下载：27/0  |  提交时间：2019/04/18
Improving Unipolar Resistive Switching Uniformity with Cone Shaped Conducting Filaments and Its Logic-In-Memory Application 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 7, 页码: 6453-6462
作者:  Yang, Huali;  Liu, Gang;  Chen, Qilai;  Xue, Wuhong;  Shang, Jie
收藏  |  浏览/下载：66/0  |  提交时间：2018/12/04
Low leakage current resistive memory based on Bi-1.10 (Fe0.95Mn0.05) O-3 films 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: Vol.33 No.9
作者:  Li, Zhen;  Yang, Zhengchun;  Wu, Jiagang;  Zhou, Baozeng;  Bao, Qiwen
收藏  |  浏览/下载：3/0  |  提交时间：2019/02/25
Improvement of durability and switching speed by incorporating nanocrystals in the HfO based resistive random access memory devices 期刊论文
Applied Physics Letters, 2018, 卷号: Vol.113 No.2, 页码: 023105
作者:  Wu, Q.;  Banerjee, W.;  Jingchen Cao;  Zhuoyu Ji;  Ling Li
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/26
Overwhelming coexistence of negative differential resistance effect and RRAM 期刊论文
Physical Chemistry Chemical Physics, 2018, 卷号: 20, 期号: 31, 页码: 20635-20640
作者:  Guo, T.;  Sun, B.;  Zhou, Y.;  Zhao, H. B.;  Lei, M.
收藏  |  浏览/下载：6/0  |  提交时间：2019/09/17

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