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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2018    专题：大连理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Distribution of Phosphorus in n-Type Multicrystalline Silicon Produced by Directional Solidification 期刊论文 IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 卷号: 8, 页码: 1486-1493 作者:  Li, Pengting;  Wang, Zilong;  Shi, Shuang;  Ren, Shiqiang;  Jiang, Dachuan 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/02 Distribution  evaporation  n-type  phosphorus   Removal of inclusions from nickel-based superalloy by induced directional solidification during electron beam smelting 期刊论文 VACUUM, 2018, 卷号: 156, 页码: 39-47 作者:  You, Qifan;  Yuan, Hua;  Zhao, Longhai;  Li, Jiayan;  You, Xiaogang 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/02 Purification  Nickel-based superalloy  Electron beam smelting  Induced directional solidification   Influence of specimen thickness on the creep behavior of a directional solidification nickel-based superalloy 期刊论文 Vacuum, 2018, 卷号: 150, 页码: 105-115 作者:  Cheng CQ(程从前);  Cao TS(曹铁山);  Zhao J(赵杰) 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/02 Fabrication of Al-Si Gasar by mold casting technique 期刊论文 INTERNATIONAL JOURNAL OF MATERIALS RESEARCH, 2018, 卷号: 109, 页码: 332-340 作者:  Komissarchuk, Olga;  Hao, Hai;  Zhang, Xing-lu;  Karpov, Vladimir 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/02 Gasar  Al-Si alloys  Mold casting technique  Directional solidification  Hydrogen   Influence of specimen thickness on the creep behavior of a directional solidification nickel-based sulperalloy 期刊论文 VACUUM, 2018, 卷号: 150, 页码: 105-115 作者:  Hu, Yebing;  Zhang, Li;  Cheng, Congqian;  Zhao, Pengtao;  Cao, Tieshan 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02 Creep  Oxidation  Crack  Creep damage   Effect of temperature gradient on the diffusion layer thickness of impurities during directional solidification process 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 卷号: 74, 页码: 102-108 作者:  Ren, Shiqiang;  Tan, Yi;  Jiang, Dachuan;  Li, Pengting;  Li, Jiayan 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/02 Silicon ingot  Directional solidification  Temperature gradient  Diffusion layer thickness   Improving the purity of multicrystalline silicon by using directional solidification method 会议论文 8th International Conference on Manufacturing Science and Technology, ICMST 2017, Hong Kong, Hong kong, 2017-06-23 作者:  Li, Pengting;  Ren, Shiqiang;  Wang, Zilong;  Tan, Yi 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/02