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All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process 期刊论文
2017, 卷号: 5, 期号: [db:dc_citation_issue], 页码: 7043
作者:  Zheng, Zeke[1];  Zeng, Yong[1];  Yao, Rihui[1];  Fang, Zhiqiang[1];  Zhang, Hongke[1]
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/03
Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics 期刊论文
2017, 卷号: 80, 期号: 1
作者:  Wei, Xixiong[1];  Deng, Wanling[1];  Fang, Jielin[1];  Ma, Xiaoyu[1];  Huang, Junkai[1]
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/10
Modeling of I-V characteristics in symmetric double-gate polysilicon thin-film transistors 期刊论文
2017, 卷号: 7, 期号: 6
作者:  Ma, Xiaoyu[1];  Chen, Songlin[1];  Deng, Wanling[1];  Huang, Junkai[1]
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/13
A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime 期刊论文
2017, 卷号: 137, 页码: 38
作者:  Yu, Fei[1,2];  Ma, Xiaoyu[1];  Deng, Wanling[1];  Liou, Juin J.[3];  Huang, Junkai[1]
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/13
Metal oxide semiconductor thin-film transistors: Device physics and compact modeling 期刊论文
2017, 页码: 69
作者:  Deng, Wanling[1];  Fang, Jielin[1];  Wei, Xixiong[1];  Yu, Fei[1]
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/17
All-sputtered, flexible, bottom-gate IGZO/Al2O3bi-layer thin film transistors on PEN fabricated by a fully room temperature process 期刊论文
2017, 卷号: 5, 期号: 28, 页码: 7043
作者:  Zheng, Zeke[1];  Zeng, Yong[1];  Yao, Rihui[1];  Fang, Zhiqiang[1];  Zhang, Hongke[1]
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/17
A Physics-Based Compact Model for Symmetrical Double-Gate Polysilicon Thin-Film Transistors 期刊论文
2017, 卷号: 64, 期号: 5, 页码: 2221
作者:  Yu, Fei[1,2];  Deng, Wanling[1];  Huang, Junkai[1];  Ma, Xiaoyu[1];  Liou, Juin J.[3]
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/06


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