QQ客服 官方微博 反馈留言

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Novel IGBT Structure With Floating N-Doped Buried Layer in P-base to Suppress Latch-Up 期刊论文 IEEE Electron Device Letters, 2016 作者:  Tian XL(田晓丽);  Lu SJ(卢烁今);  Teng Y(腾渊);  Shen QX(沈千行);  Zhang GY(张广银) 收藏  |  浏览/下载：11/0  |  提交时间：2017/05/11 Theoretical Modification of the Negative Miller Capacitance during the Switching Transients of IGBTs 期刊论文 半导体学报, 2016 作者:  Han ZS(韩郑生);  Teng Y(腾渊) 收藏  |  浏览/下载：13/0  |  提交时间：2017/05/11 Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文 ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7 作者:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao) 收藏  |  浏览/下载：20/0  |  提交时间：2016/12/12 total ionizing dose effects  deep sub-micron  metal oxide semiconductor field effect transistor  static random access memory   Development of a Novel 30 kV Solid-state Switch for Damped Oscillating Voltage Testing System 期刊论文 JOURNAL OF POWER ELECTRONICS, 2016, 卷号: 16, 期号: [db:dc_citation_issue], 页码: 786-797 作者:  Hou, Zhe;  Li, Hongjie;  Li, Jing;  Ji, Shengchang;  Huang, Chenxi 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/02 High voltage switch  Damped oscillating voltage testing system  Series connection  Insulated gate bipolar transistor (IGBT)  Flyback converter   Voltage balancing circuit for series-connected IGBTs in solid-state breaker 期刊论文 Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2016, 卷号: 36, 期号: [db:dc_citation_issue], 页码: 656-663 作者:  Zhang, Fan;  Yang, Xu;  Ren, Yu;  Chen, Ying;  Gou, Ruifeng 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/02 Dc circuit breakers  High voltage direct current  Insulate gate bipolar transistor (IGBT)  Series connections  Voltage balancing   A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control 期刊论文 ENERGIES, 2016, 卷号: 9, 期号: [db:dc_citation_issue] 作者:  Ren, Ming;  Zhang, Chongxing;  Dong, Ming;  Ye, Rixin;  Albarracin, Ricardo 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/02 switching impulse (SI)  boosting transformer  impulse generator  insulated gate bipolar transistor (IGBT)  impulse waveform parameters   A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact 期刊论文 半导体学报(英文版), 2016, 卷号: 第2期, 页码: 104-108 作者:  Jiang MX(蒋梦轩);  Shen Z(沈征);  Wang J(王俊);  Yin X(尹新);  Shuai ZK(帅智康) 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/31 Schottky  transistor  bipolar  insulated  TCAD  breakdown  emitter  trench  junction  capacitance   Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar 期刊论文 IEEE Journal of the Electron Devices Society, 2016, 卷号: Vol.4 No.3, 页码: 144-148 作者:  Jiang, MX;  Shen, ZJ;  Wang, J;  Shuai, ZK;  Yin, X 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/31 Insulated gate bipolar transistors  Reliability  Electric fields  Silicon  Breakdown voltage  Reliability  Avalanche Energy  Breakdown Voltage  Forward Voltage Drop  IGBT   Simulation Study of an Injection Enhanced Insulated-Gate Bipolar Transistor With p-Base Schottky Contact. 期刊论文 IEEE Transactions on Electron Devices, 2016, 卷号: Vol.63 No.5, 页码: 1991-1995 作者:  Jiang, MX;  Shen, ZJ 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact 期刊论文 半导体学报（英文版）, 2016, 卷号: No.2, 页码: 100-104 - 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 breakdown  voltage  conductivity  modulation  current  density  latch  up  IGBT