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Vertical cavity surface emmiting laser 专利
专利号: US20160276805A1, 申请日期: 2016-09-22, 公开日期: 2016-09-22
作者:  PADULLAPARTHI, BABU DAYAL
收藏  |  浏览/下载:0/0  |  提交时间:2020/01/18
Curvature-induced bound states and coherent electron transport on the surface of a truncated cone 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 卷号: 76, 页码: 28-34
作者:  Du, Long;  Wang, Yong-Long;  Liang, Guo-Hua;  Kang, Guang-Zhen;  Liu, Xiao-Jun
收藏  |  浏览/下载:23/0  |  提交时间:2016/09/27
Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate 期刊论文
materials science in semiconductor processing, 2016, 卷号: 42, 页码: 283-287
作者:  Lin, Tao;  Sun, Ruijuan;  Sun, Hang;  Guo, Enmin;  Duan, Yupeng
收藏  |  浏览/下载:15/0  |  提交时间:2016/01/11
VECSEL  MOVPE  InGaAs  
Curvature-induced bound states and coherent electron transport on the surface of a truncated cone 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 卷号: 76, 页码: 28-34
作者:  Du, L;  Wang, YL;  Liang, GH;  Kang, GZ;  Liu, XJ
收藏  |  浏览/下载:52/0  |  提交时间:2019/04/08
Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 卷号: 81, 页码: 240-247
作者:  Yu, Jinling;  Cheng, Shuying;  Lai, Yunfeng;  Zheng, Qiao;  Chen, Yonghai
收藏  |  浏览/下载:3/0  |  提交时间:2019/11/21
Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells 期刊论文
NANOSCALE RESEARCH LETTERS, 2016, 卷号: 11
作者:  Yu, Jinling;  Zeng, Xiaolin;  Cheng, Shuying;  Chen, Yonghai;  Liu, Yu
收藏  |  浏览/下载:1/0  |  提交时间:2019/11/21
GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence 期刊论文
JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 119
作者:  Chen, Xiren[1];  Xing, Junliang[2];  Zhu, Liangqing[3];  Zha, F.X.[4];  Niu, Zhichuan[5]
收藏  |  浏览/下载:10/0  |  提交时间:2019/04/26
Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells 期刊论文
nanoscale res lett, 2016, 卷号: 11, 期号: 1, 页码: 477
Jinling Yu; Xiaolin Zeng; Shuying Cheng; Yonghai Chen; Yu Liu; Yunfeng Lai; Qiao Zheng; Jun Ren
收藏  |  浏览/下载:15/0  |  提交时间:2017/03/10
Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells 期刊论文
chinese physics letters, 2016, 卷号: 33, 期号: 10, 页码: 107802
Bing-Hui Niu; Teng-Fei Yan; Hai-Qiao Ni; Zhi-Chuan Niu; Xin-Hui Zhang
收藏  |  浏览/下载:26/0  |  提交时间:2017/03/16
GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence 期刊论文
journal of applied physics, 2016, 卷号: 119, 期号: 17, 页码: 175301
Xiren Chen; Junliang Xing; Liangqing Zhu; F.-X. Zha; Zhichuan Niu; Shaoling Guo; Jun Shao
收藏  |  浏览/下载:26/0  |  提交时间:2017/03/16


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