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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2016    专题：山东大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Simulation of V/G during Φ450 mm Czochralski Grown Silicon Single Crystal Growth under the Different Crystal and Crucible Rotation Rates 期刊论文 MATEC Web of Conferences, 2016, 卷号: 67 作者:  Guan X.J.;  Zhang X.Y. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/16 Simulation of V/G During Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates 会议论文 作者:  X J GUAN;  X Y ZHANG 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/31 Simulation of V/G During  mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates   Simulation of V/G during Φ450 mm Czochralski Grown Silicon Single Crystal Growth under the Different Crystal and Crucible Rotation Rates 会议论文 International Symposium on Materials Application and Engineering, SMAE 2016, August 20, 2016 - August 21, 2016 作者:  Guan, X.J.;  Zhang, X.Y. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 Simulation of V/G During phi 450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates 会议论文 International Symposium on Materials Application and Engineering (SMAE), AUG 20-21, 2016 作者:  Guan, X. J.;  Zhang, X. Y. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 Phase Field Modeling of the Effects of Gradient Energy Coefficients on the Void-matrix Interface Thickness during Czochralski Silicon Crystal 会议论文 6th International Conference on Manufacturing Science and Engineering (ICMSE), NOV 28-29, 2015 作者:  Guan, X. J.;  Wang, J. 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/31 Silicon crystal  Czochralski process  Phase field modeling  Gradient  energy coefficient  Void-matrix interface thickness