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Simulation of V/G During Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates 会议论文
作者:  X J GUAN;  X Y ZHANG
收藏  |  浏览/下载:1/0  |  提交时间:2019/12/31
Simulation of V/G during Φ450 mm Czochralski Grown Silicon Single Crystal Growth under the Different Crystal and Crucible Rotation Rates 会议论文
International Symposium on Materials Application and Engineering, SMAE 2016, August 20, 2016 - August 21, 2016
作者:  Guan, X.J.;  Zhang, X.Y.
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/31
Simulation of V/G During phi 450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates 会议论文
International Symposium on Materials Application and Engineering (SMAE), AUG 20-21, 2016
作者:  Guan, X. J.;  Zhang, X. Y.
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/31


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