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浏览/检索结果: 共48条，第1-10条 帮助 限定条件 发表日期：2015    专题：山东大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhancing the photocatalytic activity of GaN by electrochemical etching 期刊论文 MATERIALS RESEARCH BULLETIN, 2015, 卷号: 70, 页码: 881-886 作者:  Cao, Dezhong;  Xiao, Hongdi;  Xu, Hangzhou;  Cui, Jishi;  Gao, Qingxue 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Nanoporous GaN  Photocatalytic activity  Porous Si  Electrochemical  etching   Effect of temperature on the transformation from Zn-Ga layered double hydroxides into (GaN)1-x(ZnO)x solid solution 期刊论文 Journal of Alloys and Compounds, 2015, 卷号: 652, 页码: 205-212 作者:  Wang, Junpeng;  Yang, Ping;  Wang, Zeyan;  Huang, Baibiao;  Dai, Ying 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 (GaN)1-x(ZnO)x solid solution  Band-gap adjusting  LDHs  Nanoplate  Nitride   Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor 期刊论文 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8 作者:  Lv Yuan-Jie;  Feng Zhi-Hong;  Gu Guo-Dong;  Yin Jia-Yun;  Fang Yu-Long 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN  barrier layer thickness  electron mobility  polarization  Coulomb field scattering   Progress in research of GaN-based LEDs fabricated on SiC substrate 期刊论文 Chinese Physics B, 2015, 期号: 06, 页码: 35-42 作者:  Xu HY(徐化勇);  Chen XF(陈秀芳);  Peng Y(彭燕);  Xu MS(徐明升);  Shen Y(沈燕) 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 SiC  GaN  AlGaN buffer  light emitting diode  flip chip  light extraction efficiency   Structural characterization of hexagonal GaN thin films grown by MOCVD on 4H-SiC substrate 期刊论文 2015 12th China International Forum on Solid State Lighting, SSLCHINA 2015, 2015, 页码: 29-32 作者:  Zhang, Heng;  Xiao, Longfei;  Qu, Shuang;  Wang, Chengxin;  Hu, Xiaobo 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 GLP-1-Exendin-4/IgG4 (Fc) Fusion Protein as a Novel Drug for Diabetes Treatment 期刊论文 EXPERIMENTAL AND CLINICAL ENDOCRINOLOGY & DIABETES, 2015, 卷号: 123, 期号: 6, 页码: 371-375 作者:  Gan, Y.;  Dang, N.;  Qu, Z.;  Shi, R.;  Ding, L. 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 glucagon-like peptide-1  exendin-4  GLP-1-Exendin-4/IgG4 (Fc) fusion  protein  pharmacokinetic study  streptozotocin (STZ)-induced diabetes  mice   Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes 期刊论文 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 卷号: 121, 期号: 3, 页码: 1271-1276 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Chen, Quanyou;  Yang, Ming;  Cui, Peng 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 Effect of temperature on the transformation from Zn-Ga layered double hydroxides into (GaN)(1-x)(ZnO)(x) solid solution 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 652, 页码: 205-212 作者:  Wang, Junpeng;  Yang, Ping;  Wang, Zeyan;  Huang, Baibiao;  Dai, Ying 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/17 LDHs  (GaN)(1-x)(ZnO)(x) solid solution  Nitride  Band-gap adjusting  Nanoplate   Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 85, 页码: 43-49 作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Wang, Yutang;  Li, Zhiyuan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Sapphire substrate thickness  Strain   Direct C5-Isomerization Approach to L-Iduronic Acid Derivatives 期刊论文 ASIAN JOURNAL OF ORGANIC CHEMISTRY, 2015, 卷号: 4, 期号: 9, 页码: 899-902 作者:  Cao, Xuefeng;  Lv, Qingqing;  Li, Dongmei;  Ye, Hui;  Yan, Xu 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 carbohydrates  D-glucuronic acids  epimerization  heparan sulfate  L-iduronic acid