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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2015    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 New field and geophysical data about transpressional deformation: An improved model for the structural style of Sha Gou fault area in southern Ningxia, northeastern edge of Tibetan Plateau, China 期刊论文 JOURNAL OF ASIAN EARTH SCIENCES, 2015 Xia, Lu; Liu, Zhen; Zhao, Haihua; Wang, Jun; Xiang, Peng; Liu, Jingjing; Cui, Hongzhuang; Ji, Jianqing 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 Northeastern Tibetan Plateau  Southwestern Liupan Shan Basin  Thrust nappe  Positive flower structure  Strike-slip  Gravity forward modeling  FOLD-THRUST BELT  AUTONOMOUS REGION  HAIYUAN FAULT  RIFT SYSTEM  SLIP  EVOLUTION  ZONE  GROWTH  UPLIFT  TECTONICS   Sketch based modeling via manifold regularization 其他 2015-01-01 Liu, Juncheng; Lian, Zhouhui; Feng, Jie; Zhou, Bingfeng 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain 其他 2015-01-01 Chang, Pengying; Liu, Xiaoyan; Zeng, Lang; Du, Gang 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Surface orientation  Strain  Hole mobility  InSb  III-V semiconductor  Modeling  V COMPOUND SEMICONDUCTORS  DEFORMATION POTENTIALS  INVERSION-LAYERS   Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain 期刊论文 44th European Solid-State Device Research Conference (ESSDERC), 2015 Chang, Pengying; Liu, Xiaoyan; Zeng, Lang; Du, Gang 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Surface orientation  Strain  Hole mobility  InSb  III-V semiconductor  Modeling  V COMPOUND SEMICONDUCTORS  DEFORMATION POTENTIALS  INVERSION-LAYERS