QQ客服 官方微博 反馈留言

浏览/检索结果: 共18条，第1-10条 帮助 限定条件 发表日期：2015    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors 期刊论文 ieee电子器件汇刊, 2015 Fan, Jiewen; Li, Ming; Xu, Xiaoyan; Yang, Yuancheng; Xuan, Haoran; Huang, Ru 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 Band-to-band tunneling (BTBT)  CMOS technology  gate-induced drain leakage (GIDL)  power consumption  silicon nanowire transistors (SNWTs)  CMOS TECHNOLOGY  MOSFET  GIDL  DEVICES  DESIGN   Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio 期刊论文 acs nano, 2015 Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lan-Mao 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/11 HIGH-PERFORMANCE ELECTRONICS  TO-UNIPOLAR CONVERSION  INTEGRATED-CIRCUITS  THRESHOLD VOLTAGE  CMOS DEVICES  ARRAYS  FABRICATION  DEPOSITION  TRANSPORT  MOBILITY   Frequency-Modulated Charge Pumping With Extremely High Gate Leakage 期刊论文 ieee电子器件汇刊, 2015 Ryan, Jason Thomas; Zou, Jibin; Southwick, Richard, III; Campbell, Jason Paul; Cheung, Kin P.; Oates, Anthony S.; Huang, Ru 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/11 Charge pumping (CP)  defects  leakage current  MOS-TRANSISTORS  DISTRIBUTIONS  COMPONENT  MOSFETS   The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons? 期刊论文 PLOS ONE, 2015 Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 GAN  TRANSPORT  DEFECT  LAYERS  HFETS   Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices 期刊论文 半导体学报（英文版）, 2015 Wu Weikang; An Xia; Tan Fei; Feng Hui; Chen Yehua; Liu Jingjing; Zhang Xing 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 heavy ion displacement damages PDSOI performance degradation  heavy ion  displacement damages  PDSOI  performance degradation   Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices 期刊论文 半导体学报（英文版）, 2015 Chen Yehua; An Xia; Wu Weikang; Zhang Yao; Liu Jingjing; Zhang Xing; Huang Ru 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 heavy ion displacement damage bulk silicon  heavy ion  displacement damage  bulk silicon   Comparative study of silicon nanowire transistors with triangular-shaped cross sections 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Zhang, Yi-Bo; Sun, Lei; Xu, Hao; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 SCHOTTKY-BARRIER SOURCE/DRAIN  MOSFET  PERFORMANCE  SIMULATION  FINFETS  LEAKAGE   New concept of planar germanium MOSFET with stacked germanide layers at source/drain 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Xu, Hao; Sun, Lei; Zhang, Yi-Bo; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 HIGH-KAPPA GATE  SCHOTTKY SOURCE/DRAIN  METAL GATE  MOBILITY  CONTACTS  SI  TECHNOLOGY  TRANSISTOR  SUBSTRATE  PMOSFETS   A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology 期刊论文 CHINESE PHYSICS B, 2015 Zhang Li-Zhong; Wang Yuan; Lu Guang-Yi; Cao Jian; Zhang Xing 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 electrostatic discharge (ESD)  gated-PiN junction  diode string  parasitic resistance redistribution   Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 Shao, Yang; Xiao, Xiang; He, Xin; Deng, Wei; Zhang, Shengdong 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Amorphous indium-gallium-zinc oxide (a-IGZO)  anodized HfO2  high-k  low voltage  thin-film transistors (TFTs)  OXIDE  TEMPERATURE  ALUMINUM