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Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
solid-state electronics, 2013, 卷号: 83, 页码: 66-70
Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia
收藏  |  浏览/下载:19/0  |  提交时间:2013/08/27
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
Solid-State Electronics, 2013, 卷号: 83, 页码: 66–70
Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
收藏  |  浏览/下载:30/0  |  提交时间:2014/04/04
A multi-channel fully differential programmable integrated circuit for neural recording application 期刊论文
journal of semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 105009
Gui Yun; Zhang Xu; Wang Yuan; Liu Ming; Pei Weihua; Liang Kai; Huang Suibiao; Li Bin; Chen Hongda
收藏  |  浏览/下载:20/0  |  提交时间:2014/04/28
Multi-component continuous separation chip composed of micropillar arrays in a split-level spiral channel 期刊论文
rsc advances, 2013, 卷号: 3, 期号: 34, 页码: 14798-14806
Zhaoxin Geng, Yanrui Ju, Qifeng Wang, Wei Wangb and Zhihong Li
收藏  |  浏览/下载:20/0  |  提交时间:2014/04/04
Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文
ieee electron device letters, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Gong, Xiao; Han, Genquan; Bai, Fan; Su, Shaojian; Guo, Pengfei; Yang, Yue; Cheng, Ran; Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Pan, Jisheng; Zhang, Zheng; Tok, Eng Soon; Antoniadis, Dimitri; Yeo, Yee-Chia
收藏  |  浏览/下载:28/0  |  提交时间:2013/09/17


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