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Theoretical Study about the formation of the stacking faults in GaN nanowires along different growth directions 会议论文
International Conference on Computational Materials Science, Guangzhou, PEOPLES R CHINA, APR 17-18, 2011
作者:  Zhang, JP (张锦平);  Yang, H (杨辉);  Xu, K (徐科);  Gong, XJ (弓晓晶);  Gong, XJ (弓晓晶)
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