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科研机构
半导体研究所 [9]
内容类型
期刊论文 [9]
发表日期
2011 [9]
学科主题
半导体材料 [9]
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浏览/检索结果:
共9条,第1-9条
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发表日期:2011
学科主题:半导体材料
内容类型:期刊论文
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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
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浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures
期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP
;
Wu J
;
Lu YW
;
Li ZW
;
Song YF
;
Li CM
;
Yang SY
;
Liu XL
;
Zhu QS
;
Wang ZG
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  |  
浏览/下载:23/0
  |  
提交时间:2012/02/06
FIELD-EFFECT TRANSISTORS
INTERFACE ROUGHNESS
QUANTUM-WELLS
MOBILITY
HETEROJUNCTION
TRANSPORT
MODEL
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
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浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Electron mobility in modulation-doped AlSb/InAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703
作者:
Zhang Y
;
Li YB
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浏览/下载:53/5
  |  
提交时间:2011/07/05
ACOUSTIC-PHONON-SCATTERING
LOW-POWER APPLICATIONS
TRANSPORT-PROPERTIES
INTERFACE ROUGHNESS
INAS/ALSB HEMTS
HETEROSTRUCTURES
INAS
TRANSISTORS
GAS
LAYERS
Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 116802
Li LG (Li Li-Gong)
;
Liu SM (Liu Shu-Man)
;
Luo S (Luo Shuai)
;
Yang T (Yang Tao)
;
Wang LJ (Wang Li-Jun)
;
Liu FQ (Liu Feng-Qi)
;
Ye XL (Ye Xiao-Ling)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2012/02/21
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
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  |  
浏览/下载:57/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
Fabrication, morphology and mechanical properties of Al2O3-Al graded coatings on China low activation martensitic steel substrates
期刊论文
surface and interface analysis, 2011
Song, Binbin
;
Wu, Ping
;
Chen, Sen
;
Zhang, Shiping
;
Yan, Dan
;
Xue, Lian
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2012/06/14
Adhesion
Auger electron spectroscopy
Fabrication
Hardness
Magnetron sputtering
Martensitic steel
Morphology
Nanoindentation
Protective coatings
Scanning electron microscopy
Silicon wafers
X ray photoelectron spectroscopy
Achieving high efficiency laminated polymer solar cell with interfacial modified metallic electrode and pressure induced crystallization
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 6, 页码: article no.63306
Yuan YB
;
Bi Y
;
Huang JS
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  |  
浏览/下载:60/5
  |  
提交时间:2011/07/05
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