QQ客服 官方微博 反馈留言

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2010    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：18/0  |  提交时间：2010/12/12 DEPENDENCE  SPECTRA   Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region 期刊论文 ieee photonics technology letters, 2010, 卷号: 22, 期号: 24, 页码: 1799-1801 Lv XQ (Lv X. Q.); Jin P (Jin P.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：8/0  |  提交时间：2010/12/27 Broadband tuning  external cavity  quantum dots (QDs)  tunable laser   Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model 期刊论文 solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710 Wang Y (Wang Y.); Chen NF (Chen N. F.); Zhang XW (Zhang X. W.); Huang TM (Huang T. M.); Yin ZG (Yin Z. G.); Wang YS (Wang Y. S.); Zhang H (Zhang H.) 收藏  |  浏览/下载：190/22  |  提交时间：2010/09/07 Thermophotovoltaic  Gallium antimonide  Absorption coefficient   A Selective-Area Metal Bonding InGaAsP-Si Laser 期刊论文 ieee photonics technology letters, 2010, 卷号: 22, 期号: 15, 页码: 1141-1143 Hong T (Hong Tao); Ran GZ (Ran Guang-Zhao); Chen T (Chen Ting); Pan JQ (Pan Jiao-Qing); Chen WX (Chen Wei-Xi); Wang Y (Wang Yang); Cheng YB (Cheng Yuan-Bing); Liang S (Liang Song); Zhao LJ (Zhao Ling-Juan); Yin LQ (Yin Lu-Qiao); Zhang JH (Zhang Jian-Hua); Wang W (Wang Wei); Qin GG (Qin Guo-Gang) 收藏  |  浏览/下载：255/27  |  提交时间：2010/10/11 InGaAsP-Si laser  selective-area metal bonding (SAMB)  Si photonics   Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文 japanese journal of applied physics, 2010, 卷号: 49, 期号: 7, 页码: art. no. 072103 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：89/11  |  提交时间：2010/08/17 DEPENDENCE  WELL   Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文 journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Li YB (Li Yanbo) 收藏  |  浏览/下载：148/33  |  提交时间：2010/06/04 Reflection high-energy electron diffraction  Atomic force microscopy  Molecular beam epitaxy  Zinc compounds  Semiconducting II-VI materials