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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2010    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文 solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994 Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/27 ZnO  In2O3  MOCVD  Photoelectron spectroscopies  IN2O3-ZNO FILMS  TRANSPARENT  OXIDE  SEMICONDUCTORS  INN   Surface roughness scattering in two dimensional electron gas channel 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111 Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG 收藏  |  浏览/下载：48/5  |  提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY  MOBILITY ALGAN/GAN HETEROSTRUCTURES  RAY PHOTOEMISSION SPECTROSCOPY  PERFORMANCE  ALN  MODFETS  INN   Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature 期刊论文 microelectronic engineering, 2010, 卷号: 87, 期号: 10, 页码: 1834-1837 Peng YS (Peng Y. S.); Xu B (Xu B.); Ye XL (Ye X. L.); Niu JB (Niu J. B.); Jia R (Jia R.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：106/27  |  提交时间：2010/08/17 Photonic crystal nanocavities  Quantum dots  Cavity resonant mode  Room temperature   Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文 nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343 Liu JM (Liu J. M.); Liu XL (Liu X. L.); Xu XQ (Xu X. Q.); Wang J (Wang J.); Li CM (Li C. M.); Wei HY (Wei H. Y.); Yang SY (Yang S. Y.); Zhu QS (Zhu Q. S.); Fan YM (Fan Y. M.); Zhang XW (Zhang X. W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：146/21  |  提交时间：2010/08/17 Valence band offset  w-InN/h-BN heterojunction  X-ray photoelectron spectroscopy  Conduction band offset  Valence band offset  NEGATIVE ELECTRON-AFFINITY  INDIUM NITRIDE  WURTZITE GAN  SURFACE  FILM  ALN  TRANSPORT  EMISSION  NAXWO3  GROWTH   The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513 Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：13/0  |  提交时间：2010/12/05 QUANTUM-DOT SYSTEM  ISLAND FORMATION  IN-SITU  EVOLUTION  GAAS  PHOTOLUMINESCENCE   The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system 期刊论文 crystengcomm, 2010, 卷号: 12, 期号: 11, 页码: 3936-3941 Song HP (Song Huaping); Guo Y (Guo Yan); Yang A (Yang Anli); Wei HY (Wei Hongyuan); Xu XQ (Xu Xiaoqing); Liu JM (Liu Jianming); Yang SY (Yang Shaoyan); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：23/0  |  提交时间：2010/11/14 INDIUM-PHOSPHIDE NANOWIRES   Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057305 Peng YC (Peng Ying-Cai); Fan ZD (Fan Zhi-Dong); Bai ZH (Bai Zhen-Hua); Zhao XW (Zhao Xin-Wei); Lou JZ (Lou Jian-Zhong); Cheng X (Cheng Xu) 收藏  |  浏览/下载：159/35  |  提交时间：2010/05/24 POROUS SILICON  MECHANISM  EMISSION   Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文 applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143 Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：196/52  |  提交时间：2010/04/28 BAND-GAP  TEMPERATURE-DEPENDENCE  ENERGY  SEMICONDUCTORS  SPECTRA  EPITAXY  GROWTH  LAYERS