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浏览/检索结果: 共25条，第1-10条 帮助 限定条件 发表日期：2010    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model 期刊论文 semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095002 Wang Y (Wang Y.); Chen NF (Chen N. F.); Zhang XW (Zhang X. W.); Huang TM (Huang T. M.); Yin ZG (Yin Z. G.); Bai YM (Bai Y. M.) 收藏  |  浏览/下载：171/19  |  提交时间：2010/09/20 OPTICAL DIELECTRIC FUNCTION  DISPERSION-RELATIONS  CARRIER MOBILITIES  PHASE EPITAXY  DOPED GAAS  DEVICES  GASB  INP  ALXGA1-XAS  INGAASSB   Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038501 Kong N (Kong Ning); Liu JQ (Liu Jun-Qi); Li L (Li Lu); Liu FQ (Liu Feng-Qi); Wang LJ (Wang Li-Jun); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：195/33  |  提交时间：2010/04/22 WELL INFRARED PHOTODETECTORS  LASER   High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：150/30  |  提交时间：2010/04/13 THRESHOLD CURRENT  ROOM-TEMPERATURE  DEPENDENCE  PHOTOLUMINESCENCE   The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文 solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994 Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/27 ZnO  In2O3  MOCVD  Photoelectron spectroscopies  IN2O3-ZNO FILMS  TRANSPARENT  OXIDE  SEMICONDUCTORS  INN   Surface roughness scattering in two dimensional electron gas channel 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111 Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG 收藏  |  浏览/下载：49/5  |  提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY  MOBILITY ALGAN/GAN HETEROSTRUCTURES  RAY PHOTOEMISSION SPECTROSCOPY  PERFORMANCE  ALN  MODFETS  INN   Gate controlled Aharonov-Bohm-type oscillations from single neutral excitons in quantum rings 期刊论文 physical review b, 2010, 卷号: 82, 期号: 7, 页码: art. no. 075309 Ding F (Ding F.); Akopian N (Akopian N.); Li B (Li B.); Perinetti U (Perinetti U.); Govorov A (Govorov A.); Peeters FM (Peeters F. M.); Bufon CCB (Bufon C. C. Bof); Deneke C (Deneke C.); Chen YH (Chen Y. H.); Rastelli A (Rastelli A.); Schmidt OG (Schmidt O. G.); Zwiller V (Zwiller V.) 收藏  |  浏览/下载：186/34  |  提交时间：2010/09/07 ENERGY-SPECTRA   Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512 Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.) 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/14 CHEMICAL-VAPOR-DEPOSITION  INAS QUANTUM DOTS  MOLECULAR-BEAM EPITAXY  GAAS  SURFACES  ISLANDS  GROWTH  FABRICATION  MIGRATION  ARRAYS   Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s 期刊论文 chemistry of materials, 22 (4): feb 23 2010, 2010, 卷号: 22, 期号: 4, 页码: 1294-1296 Wen Q (Wen Qian); Zhang RF (Zhang Rufan); Qian WZ (Qian Weizhong); Wang YR (Wang Yuran); Tan PH (Tan Pingheng); Nie JQ (NieJingqi); Wei F (Wei Fei) 收藏  |  浏览/下载：128/7  |  提交时间：2010/04/13 CHEMICAL-VAPOR-DEPOSITION  WALLED CARBON NANOTUBES  WATER  ULTRALONG  CATALYSTS  MECHANISM   Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文 thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230 Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28 Gallium Arsenide  Gallium antimonide  Gallium antimonide/Aluminum antimonide  Superlattices  Molecular Beam Epitaxy  VAPOR-PHASE EPITAXY  SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  TEMPERATURE  RELAXATION  DETECTORS  GAAS(001)  MOCVD  FILMS   Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111 Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/11/14 VAPOR-PHASE EPITAXY  PHOTOVOLTAGE SPECTROSCOPY  PHOTOLUMINESCENCE  MODES