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科研机构
半导体研究所 [21]
福建物质结构研究所 [4]
山东大学 [3]
北京大学 [2]
上海光学精密机械研究... [2]
上海技术物理研究所 [1]
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期刊论文 [31]
学位论文 [2]
发表日期
2009 [33]
学科主题
半导体物理 [6]
半导体材料 [3]
半导体化学 [1]
红外基础研究 [1]
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Anomalous pressure behavior of n-cluster emissions in gaas0.973sb0.022n0.005
期刊论文
Chinese physics letters, 2009, 卷号: 26, 期号: 12, 页码: 4
作者:
Wang Wen-Jie
;
Deng Jia-Jun
;
Fu Xing-Qiu
;
Hu Bing
;
Ding Kun
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/05/12
The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells
期刊论文
Superlattices and Microstructures, 2009, 卷号: 46, 期号: 4, 页码: 618-626
S. D. Wu, Z. Huang, Y. Liu, Q. F. Huang, W. Guo and Y. G. Cao
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  |  
浏览/下载:44/0
  |  
提交时间:2012/11/06
Indium segregation
Transfer matrix method
Exciton binding energy
Exciton oscillator strength
molecular-beam-epitaxy
surface segregation
electric-field
ingaas
layers
growth
atoms
profile
matrix
The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells
期刊论文
Superlattices and Microstructures, 2009, 卷号: 46, 期号: 4, 页码: 618-626
S. D. Wu, Z. Huang, Y. Liu, Q. F. Huang, W. Guo and Y. G. Cao
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2012/11/06
Indium segregation
Transfer matrix method
Exciton binding energy
Exciton oscillator strength
molecular-beam-epitaxy
surface segregation
electric-field
ingaas
layers
growth
atoms
profile
matrix
Time-resolved photoluminescence of metamorphic ingaas quantum wells
期刊论文
Chinese physics letters, 2009, 卷号: 26, 期号: 10, 页码: 4
作者:
Ma Shan-Shan
;
Wang Bao-Rui
;
Sun Bao-Quan
;
Wu Dong-Hai
;
Ni Hai-Qiao
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/05/12
The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells
期刊论文
Physica E-Low-Dimensional Systems & Nanostructures, 2009, 卷号: 41, 期号: 9, 页码: 1656-1660
S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao
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  |  
浏览/下载:17/0
  |  
提交时间:2012/11/06
Indium segregation
Optical gain
Valence band structure
Quantum well
molecular-beam-epitaxy
surface segregation
lasers
subbands
parameters
growth
atoms
gaas
The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells
期刊论文
Physica E-Low-Dimensional Systems & Nanostructures, 2009, 卷号: 41, 期号: 9, 页码: 1656-1660
S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2012/11/06
Indium segregation
Optical gain
Valence band structure
Quantum well
molecular-beam-epitaxy
surface segregation
lasers
subbands
parameters
growth
atoms
gaas
Spin relaxation in submonolayer and monolayer inas structures grown in a gaas matrix
期刊论文
Physical review b, 2009, 卷号: 80, 期号: 3, 页码: 5
作者:
Yang, Chunlei
;
Cui, Xiaodong
;
Shen, Shun-Qing
;
Xu, Zhongying
;
Ge, Weikun
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/05/12
Electric field control of interface related spin splitting in step quantum wells
期刊论文
Chinese physics letters, 2009, 卷号: 26, 期号: 7, 页码: 4
作者:
Hao Ya-Fei
;
Chen Yong-Hai
;
Hao Guo-Dong
;
Wang Zhan-Guo
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/05/12
Measuring spin diffusion of electrons in bulk n-gaas using circularly dichromatic absorption difference spectroscopy of spin gratings
期刊论文
Applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: 3
作者:
Yu, Hua-Liang
;
Zhang, Xiu-Min
;
Wang, Peng-Fei
;
Ni, Hai-Qiao
;
Niu, Zhi-Chuan
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Circular dichroism
Diffraction gratings
Diffusion
Gallium arsenide
Homodyne detection
Iii-v semiconductors
Spin dynamics
Spin polarised transport
Well-width dependence of in-plane optical anisotropy in (001) gaas/algaas quantum wells induced by in-plane uniaxial strain and interface asymmetry
期刊论文
Journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: 6
作者:
Tang, C. G.
;
Chen, Y. H.
;
Xu, B.
;
Ye, X. L.
;
Wang, Z. G.
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  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Aluminium compounds
Gallium arsenide
Iii-v semiconductors
Internal stresses
Reflectivity
Semiconductor heterojunctions
Semiconductor quantum wells
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