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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载:41/0  |  提交时间:2010/03/09
Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well 期刊论文
nanoscale research letters, 2009, 卷号: 4, 期号: 11, 页码: 1315-1318
Wang J (Wang Jun); Li SS (Li Shu-Shen); Lu YW (Lue Yan-Wu); Liu XL (Liu Xiang-Lin); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载:276/95  |  提交时间:2010/03/08
Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE 期刊论文
journal of inorganic materials, 2009, 卷号: 24, 期号: 3, 页码: 559-562
Wang BZ; Wang XL
收藏  |  浏览/下载:53/0  |  提交时间:2010/03/08
A mini-staged multi-stacked quantum cascade laser for improved optical and thermal performance 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075023
作者:  Li L
收藏  |  浏览/下载:83/4  |  提交时间:2010/03/08
Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:  Ma WQ;  Cao YL;  Yang T
收藏  |  浏览/下载:43/0  |  提交时间:2010/03/09
Wet etching and infrared absorption of AlN bulk single crystals 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 7, 页码: 27-30
作者:  Ke Jianhong
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/23
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:  Yang JK;  Wei TB;  Duan RF
收藏  |  浏览/下载:73/3  |  提交时间:2010/03/08
Influence of a tilted cavity on quantum-dot optoelectronic active devices 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 37-40
作者:  Xu Bo
收藏  |  浏览/下载:17/0  |  提交时间:2010/11/23
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载:129/30  |  提交时间:2010/03/08
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:  Zhao J
收藏  |  浏览/下载:44/4  |  提交时间:2011/07/05


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