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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2009    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth behavior of AlInGaN films 会议论文 4th asian conference on crystal growth and crystal technology, sendai, japan, may 21-24, 2008 Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/09 Scanning electron microscope   Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文 chinese optics letters, 2009, 卷号: 7, 期号: 1, 页码: 52-55 Wei QX; Ren ZW; He ZH; Niu ZC 收藏  |  浏览/下载：76/0  |  提交时间：2010/03/08 1.3 MU-M  ROOM-TEMPERATURE  OPTICAL-PROPERTIES  CAP LAYER  GAAS  DEPOSITION   The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001 作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：89/41  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  ELECTRON-TRANSPORT  BAND-GAP  FILMS  SAPPHIRE   Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure 期刊论文 acta physica sinica, 2009, 卷号: 58, 期号: 10, 页码: 7278-7281 Song GF (Song Guo-Feng); Zhang Y (Zhang Yu); Guo BS (Guo Bao-Shan); Wang WM (Wang Wei-Min) 收藏  |  浏览/下载：46/14  |  提交时间：2010/03/08 surface plasmons   Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075004 作者:  Wang H;  Yang H;  Yang H;  Zhao DG;  Wang YT 收藏  |  浏览/下载：47/1  |  提交时间：2010/03/08 ELECTRON-TRANSPORT  PHASE EPITAXY  NITRIDE INN  BAND-GAP