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The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 10, 页码: 2508-2513
Zhou ZW; Li C; Lai HK; Chen SY; Yu JZ
收藏  |  浏览/下载:54/12  |  提交时间:2010/03/08
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM
收藏  |  浏览/下载:46/0  |  提交时间:2010/03/09


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